US4981807A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating complementary vertical transistor memory cell
Assignee: International Business Machines Corp
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Filing: 1988-10-31
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Granted: 1991-01-01
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Expires: 2008-10-31
Abstract
Abstract A compact complementary transistor switch (CTS) memory cell structure utilizing both vertical PNP and vertical NPN transistors in gallium arsenide technology is described. The base region of the vertical PNP transistor merges with the collector region of the vertical NPN transistor. The collector region of the vertical PNP transistor merges with the base region of the vertical NPN transistor. The emitter of the vertical PNP transistor is at the top, and the emitter of the vertical NPN transistor is at the bottom in relation to the emitter of the vertical PNP transistor. This structure leads to improvements in memory density, performance and wireability of a memory array comprising many such cells. A novel yet simple process for making such compact CTS memory cells is also disclosed.
Inventors
- 👤 Chakrapani G. Jambotkar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:39
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10B; H10B10/00; H10B10/10; H10D84/02; H10D84/05; H10D84/60; H10D84/67; H10D84/673; H10D86/00; H10D86/01; Y; Y10; Y10S; Y10S148/00; Y10S148/011; Y10S148/072; Y10S148/087; Y10S148/109
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
266 words
A method of manufacturing a semiconductor device having vertical complementary bipolar transistors comprising the steps of: (a) providing a semi-insulating substrate; (b) forming a first epitaxial layer of a first type conductivity overlying said substrate; (c) forming an semi-insulating layer having a doped region of said first conductivity type overlying said first epitaxial layer; (d) forming a second epitaxial layer of a second type of conductivity overlying said semi-insulating layer; (e) forming a third epitaxial layer of said first conductivity type overlying said second epitaxial layer; (f) forming a fourth epitaxial layer of said second conductivity type overlying said third epitaxial layer; (g) forming a first vertical transistor: (i) an emitter of said first conductivity being constituted by said doped region of said semi-insulating layer; (ii) a base of a region of said second conductivity being constituted by said second epitaxial layer; and (iii) a collector of said first conductivity being constituted by a region of said third epitaxial layer; and (h) forming a second vertical transistor complementary to said first vertical transistor: (i) an emitter being constituted by a region of said fourth epitaxial layer; (ii) a base being constituted by said region of said third epitaxial layer and common to said collector of said first vertical transistor; (iii) a collector being constituted by said region of said second epitaxial layer and common to said base of said first vertical transistor; wherein said emitter of said first vertical transistor being on the bottom; and said emitter of said second complementary vertical transistor being on the top relative to said emitter of said first vertical transistor.
Claim 2
Independent Claim
266 words
A method of manufacturing a semiconductor device having vertical complementary bipolar transistors comprising the steps of: (a) providing a semi-insulating substrate; (b) forming a first epitaxial layer of a first type conductivity overlying said substrate; (c) forming an semi-insulating layer having a doped region of said first conductivity type overlying said first epitaxial layer; (d) forming a second epitaxial layer of a second type of conductivity overlying said semi-insulating layer; (e) forming a third epitaxial layer of said first conductivity type overlying said second epitaxial layer; (f) forming a fourth epitaxial layer of said second conductivity type overlying said third epitaxial layer; (g) forming a first vertical transistor: (i) an emitter of said first conductivity being constituted by said doped region of said semi-insulating layer; (ii) a base of a region of said second conductivity being constituted by said second epitaxial layer; and (iii) a collector of said first conductivity being constituted by a region of said third epitaxial layer; and (h) forming a second vertical transistor complementary to said first vertical transistor: (i) an emitter being constituted by a region of said fourth epitaxial layer; (ii) a base being constituted by said region of said third epitaxial layer and common to said collector of said first vertical transistor; (iii) a collector being constituted by said region of said second epitaxial layer and common to said base of said first vertical transistor; wherein said emitter of said first vertical transistor being on the bottom; and said emitter of said second complementary vertical transistor being on the top relative to said emitter of said first vertical transistor.
Claim 3
Dependent Claim
44 words
A method of manufacturing a semiconductor device as set forth in claim 1, wherein said doped region in said semi-insulating layer is formed by first forming an undoped layer and then forming said doped region by ion-implanting a dopant of said first conductivity type.
Claim 4
Dependent Claim
20 words
A method of manufacture of a semiconductor device as set forth in claim 2, wherein said undoped layer is AlGaAs.
Claim 5
Dependent Claim
20 words
A method of manufacture of a semiconductor device as set forth in claim 2, wherein said undoped layer is GaAs.
Claim 6
Dependent Claim
28 words
A method of manufacturing a semiconductor device as set forth in claim 1, wherein said fourth epitaxial layer is GaAs having a dopant of said second conductivity type.
Claim 7
Dependent Claim
28 words
A method of manufacturing a semiconductor device as set forth in claim 1, wherein said fourth epitaxial layer is AlGaAs having a dopant of said second conductivity type.
Claim 8
Dependent Claim
32 words
A method of manufacturing a semiconductor device as set forth in claim 1, further comprising the step of forming a buffer layer in between said semi-insulating substrate and said first epitaxial layer.
Claim 9
Dependent Claim
54 words
A method of manufacturing a semiconductor device as set forth in claim 1, further comprising the step of forming, in said third epitaxial layer, a first Schottky barrier diode connecting to the base of said second vertical transistor, and a second Schottky barrier diode clamping the base and collector of said first vertical transistor.
References Cited (Backward Citations)
US3939039A
Cited
US4122482A
Cited
US4274891A
Cited
US4485552A
Cited
US4483726A
Cited
US4573064A
Cited
US4482906A
Cited
US4593305A
Cited
US4617724A
Cited
US4586071A
Cited
US4625223A
Cited
US4649411A
Cited
US4635087A
Cited
JPS6249658A
Cited
US4771013A
Cited
JPS63188969A
Cited
JPS63239983A
Cited
US4807008A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |