US4625223A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double heterostructure light-emitting semiconductor device
Assignee: Toshiba Corp
•
Filing: 1985-02-14
•
Granted: 1986-11-25
•
Expires: 2005-02-14
Abstract
Abstract A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer. A capping layer of GaAs having a second electrode is formed on the light-emitting layer structure. A light exit window layer for exiting the emitted light is constructed by a thin film of the capping layer.
Inventors
- 👤 Tadashi Komatsubara
- 👤 Tetsuo Sadamasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:18
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/816; H10H20/8162
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
161 words
A double heterostructure light-emitting semiconductor device comprising: a semiconductor substrate selected from a first conductivity type GaAs substrate and a first conductivity type GaAlAs substrate; a first electrode provided on one surface of said semiconductor substrate; a current confining layer formed on the other surface of said semiconductor substrate; a confined current conduction layer formed in a selected region of said current confining layer; a light-emitting semiconductor layer structure having a double heterojunction and formed on said current confining layer including said selected region; and a capping layer formed of a second conductivity type GaAs layer on the free surface of said light-emitting semiconductor layer structure; wherein said capping layer has a carrier concentration of 1×10 18 /cm 3 or higher and includes first and second portions, said first portion being used as a light exit window layer and the thickness thereof being in a range of 0.2 to 2.0 microns and said second portion having a second electrode provided thereon.
Claim 2
Dependent Claim
161 words
A double heterostructure light-emitting semiconductor device comprising: a semiconductor substrate selected from a first conductivity type GaAs substrate and a first conductivity type GaAlAs substrate; a first electrode provided on one surface of said semiconductor substrate; a current confining layer formed on the other surface of said semiconductor substrate; a confined current conduction layer formed in a selected region of said current confining layer; a light-emitting semiconductor layer structure having a double heterojunction and formed on said current confining layer including said selected region; and a capping layer formed of a second conductivity type GaAs layer on the free surface of said light-emitting semiconductor layer structure; wherein said capping layer has a carrier concentration of 1×10 18 /cm 3 or higher and includes first and second portions, said first portion being used as a light exit window layer and the thickness thereof being in a range of 0.2 to 2.0 microns and said second portion having a second electrode provided thereon.
Claim 3
Dependent Claim
80 words
A double heterostructure light-emitting semiconductor device according to claim 1, wherein said current confining layer is a layer selected from said second conductivity type GaAs layer and a second conductivity type GaAlAs layer; said light-emitting layer structure includes a first conductivity type GaAlAs clad layer, an active layer selected from a first conductivity type GaAlAs layer and a first conductivity type GaAs layer, and a second conductivity type GaAlAs clad layer, which are sequentially superposed on said current confining layer.
Claim 4
Dependent Claim
24 words
A double heterostructure light-emitting semiconductor device according to claim 2, wherein said confined current conduction layer is formed of said first conductivity type GaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-24 | 1990-05-26 | 1990-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-24 | 1994-05-26 | 1994-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-24 | 1998-05-26 | 1998-11-25 | $7700.00 | Window Closed / Lapsed |