US4968644A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating devices and devices formed thereby
Assignee: Nokia Bell Labs
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Filing: 1988-05-05
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Granted: 1990-11-06
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Expires: 2008-05-05
Abstract
Abstract A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.
Inventors
- 👤 Patrick K. Gallagher
- 👤 Martin L. Green
- 👤 Roland A. Levy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
196 words
A method for fabricating a device, comprising the steps of: forming a metal-containing material on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said metal-containing material; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 2
Independent Claim
196 words
A method for fabricating a device, comprising the steps of: forming a metal-containing material on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said metal-containing material; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 3
Dependent Claim
13 words
The method of claim 6 wherein said metal fluoride is WF 6 .
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said second reactive entity includes H 2 .
Claim 5
Dependent Claim
45 words
The method of claim 1 wherein said reducing step includes the step of increasing the concentration of a product of the reaction between said first reactive entity and said silicon above the corresponding stoichiometric amount without increasing the concentrations of said first and second entities.
Claim 6
Dependent Claim
23 words
The method of claim 6 wherein said product of the reaction between said first reactive entity and said silicon includes SiF 4 .
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said metal halide includes a metal fluoride.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein said first reactive entity includes a metal chloride.
Claim 9
Dependent Claim
13 words
The method of claim 6 wherein said metal fluoride is MoF 6 .
Claim 10
Dependent Claim
13 words
The method of claim 6 wherein said metal fluoride is ReF 6 .
Claim 11
Dependent Claim
13 words
The method of claim 7 wherein said metal chloride is TaCl 5 .
Claim 12
Dependent Claim
13 words
The method of claim 7 wherein said metal chloride is TiCl 4 .
Claim 13
Dependent Claim
14 words
The method of claim 1 wherein said second reactive entity includes SiH 4 .
Claim 14
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming material, including elemental metal, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said elemental metal; and completing the fabrication of said device, characterized in that, said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 15
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming material, including elemental metal, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said elemental metal; and completing the fabrication of said device, characterized in that, said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 16
Dependent Claim
13 words
The method of claim 13, wherein said second reactive entity includes molecular hydrogen.
Claim 17
Independent Claim
201 words
A method for fabricating a device, comprising the steps of: forming material, including elemental metal, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said elemental metal; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate, said reducing being greater than any corresponding reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 18
Independent Claim
201 words
A method for fabricating a device, comprising the steps of: forming material, including elemental metal, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including a metal halide, with at least the second reactive entity and with said silicon, the reaction between said first and second entities yielding a product which includes said elemental metal; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate, said reducing being greater than any corresponding reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 19
Dependent Claim
13 words
The method of claim 15, wherein said second reactive entity includes molecular hydrogen.
Claim 20
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming material, including elemental tungsten, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including tungsten hexafluoride, with at least the second reactive entity, including molecular hydrogen, and with said silicon, the reaction between said first and second entities yielding a product which includes elemental tungsten; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 21
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming material, including elemental tungsten, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including tungsten hexafluoride, with at least the second reactive entity, including molecular hydrogen, and with said silicon, the reaction between said first and second entities yielding a product which includes elemental tungsten; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate without a substantial reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 22
Independent Claim
202 words
A method for fabricating a device, comprising the steps of: forming material, including elemental tungsten, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including tungsten hexafluoride, with at least the second reactive entity, including molecular hydrogen, and with said silicon, the reaction between said first and second entities yielding a product which includes elemental tungsten; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate, said reducing being greater than any corresponding reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
Claim 23
Independent Claim
202 words
A method for fabricating a device, comprising the steps of: forming material, including elemental tungsten, on a region of a substrate which includes silicon of n-type conductivity, said forming step including exposing the region to an atmosphere, associated with the atmosphere being a total pressure, the atmosphere comprising at least a first and a second reactive entity, and said forming step further including the step of reacting, at one or more reaction conditions, at least the first reactive entity, including tungsten hexafluoride, with at least the second reactive entity, including molecular hydrogen, and with said silicon, the reaction between said first and second entities yielding a product which includes elemental tungsten; and completing the fabrication of said device, characterized in that said reacting step includes the step of reducing the forward reaction rate between said first reactive entity and said silicon, during at least a portion of the duration of at least one of said reaction conditions, below the corresponding, inherent forward reaction rate, said reducing being greater than any corresponding reduction in the corresponding forward reaction rate between said first and second reactive entities; and said total pressure is in the range from greater than 1.42 torr to about 2 torr.
References Cited (Backward Citations)
EP0047913A1
Cited
JPS5772132A
Cited
US4343676A
Cited
US4349408A
Cited
US4359490A
Cited
US4501769A
Cited
US4517225A
Cited
US4597167A
Cited
JPS6057925A
Cited
US4540609A
Cited
US4532702A
Cited
US4582563A
Cited
US4629635A
Cited
EP0178200A1
Cited
US4552783A
Cited
US4595608A
Cited
EP0194950A2
Cited
US4617087A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |