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Method of manufacturing an epitaxial indium phosphide layer on a substrate surface

Assignee: US Philips Corp
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Filing: 1989-10-02
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Granted: 1990-10-23
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Expires: 2009-10-02
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Abstract

Abstract A method of manufacturing an epitaxial InP layer on a substrate surface by means of a MOVPE process at atmospheric pressure, cyclopentadienyl indium (I) or alkyl cyclopentadienyl indium (I) being used as the indium precursor, thereby precluding side reactions.

Inventors

  • 👤 Aemilianus G. J. Staring

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 23:00
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C30; C30B; C30B25/00; C30B25/02; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C30B29/00; C30B29/10; C30B29/40; G; G05; G05B; G05B2219/00; G05B2219/30; G05B2219/49; G05B2219/49013; Y; Y10; Y10S; Y10S148/00; Y10S148/11; Y10S148/119

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 51 words
A method of providing an epitaxial indium phosphide layer on a substrate surface by bringing a gas mixture comprising a metalorganic indium compound and phosphine into contact with the heated substrate surface, characterized in that cyclopentadienyl indium (I) is used as the metalorganic indium compound, the cyclopentadiene group optionally being alkyl-substituted.
Claim 2
Independent Claim 51 words
A method of providing an epitaxial indium phosphide layer on a substrate surface by bringing a gas mixture comprising a metalorganic indium compound and phosphine into contact with the heated substrate surface, characterized in that cyclopentadienyl indium (I) is used as the metalorganic indium compound, the cyclopentadiene group optionally being alkyl-substituted.
Claim 3
Dependent Claim 27 words
A method as claimed in claim 1, characterized in that the vapour pressure of the alkyl-substituted cyclopentadienyl indium (I) is at least 0.01 mbar at 20° C.
Claim 4
Dependent Claim 28 words
A method as claimed in claim 2, characterized in that monoalkyl cyclopentadienyl indium (I) is used, the number of carbon atoms of the alkyl group being maximally 4.
Claim 5
Dependent Claim 16 words
A method as claimed in claim 2, characterized in that methyl cyclopentadienyl indium (I) is used.

References Cited (Backward Citations)

US4764439A Cited
US4716130A Cited
JPS60245214A Cited
US4720560A Cited
US4734514A Cited
US4801439A Cited
US4847399A Cited
US4782034A Cited
US4981979A Cited
JPH0194613A Cited
US4916828A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-10-22 1994-04-23 1994-10-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-10-22 1998-04-23 1998-10-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-10-22 2002-04-23 2002-10-23 $7700.00 Window Closed / Lapsed

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