Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
238 words
A process for preparing a product having the formula: M.sup.1 R.sub.a wherein M 1 is an element of Group III-A of the Periodic Table; each R is independently selected from hydrogen, hydrocarbyl, and combinations thereof; and a is 3; said product having total volatile metal compound impurities of less than 1 ppm; comprising the steps of: A. forming a nonvolatile intermediate compound having the formula: {M.sup.1 R.sub.(a+1) }.sup.-.sub.b {M.sup.2 }.sup.+b wherein M 1 is a Group III-A element, M 2 is selected from elements of Groups I-A and II-A of the periodic Table and ammonium, a is three, b is selected from 1 or 2, each R is independently selected from hydrocarbyl, hydrogen and combinations thereof, and said intermediate compound includes volatile organometallic impurities, B. distilling the major production of said volatile organometallic impurities away from said intermediate compound, leaving a residue of said volatile organometallic impurities mixed with said intermediate compound, C. decomposing said intermediate compound according to the following reaction: c{M.sup.1 R.sub.(a+1) }.sup.-.sub.b {M.sup.2 }.sup.+b +dM.sup.1 X.sub.a →eM.sup.1 R.sub.a +fM.sup.2 X.sub.b wherein c, d, e, and f are integers selected to balance the equation and X is an anion; thereby providing said M 1 R a mixed with said residue, and D. postdistilling said MR a mixed with said residue from the liquid state, thereby selectively distilling said residue out of said MR a ; whereby said product contains less than one ppm of said residue.
Claim 2
Dependent Claim
238 words
A process for preparing a product having the formula: M.sup.1 R.sub.a wherein M 1 is an element of Group III-A of the Periodic Table; each R is independently selected from hydrogen, hydrocarbyl, and combinations thereof; and a is 3; said product having total volatile metal compound impurities of less than 1 ppm; comprising the steps of: A. forming a nonvolatile intermediate compound having the formula: {M.sup.1 R.sub.(a+1) }.sup.-.sub.b {M.sup.2 }.sup.+b wherein M 1 is a Group III-A element, M 2 is selected from elements of Groups I-A and II-A of the periodic Table and ammonium, a is three, b is selected from 1 or 2, each R is independently selected from hydrocarbyl, hydrogen and combinations thereof, and said intermediate compound includes volatile organometallic impurities, B. distilling the major production of said volatile organometallic impurities away from said intermediate compound, leaving a residue of said volatile organometallic impurities mixed with said intermediate compound, C. decomposing said intermediate compound according to the following reaction: c{M.sup.1 R.sub.(a+1) }.sup.-.sub.b {M.sup.2 }.sup.+b +dM.sup.1 X.sub.a →eM.sup.1 R.sub.a +fM.sup.2 X.sub.b wherein c, d, e, and f are integers selected to balance the equation and X is an anion; thereby providing said M 1 R a mixed with said residue, and D. postdistilling said MR a mixed with said residue from the liquid state, thereby selectively distilling said residue out of said MR a ; whereby said product contains less than one ppm of said residue.
Claim 3
Dependent Claim
9 words
The process of claim 1, wherein M is indium.
Claim 4
Dependent Claim
10 words
The process of claim 1, wherein M 1 is gallium.
Claim 5
Dependent Claim
10 words
The process of claim 1, wherein M 1 is aluminum.
Claim 6
Dependent Claim
10 words
The process of claim 1, wherein each R is alkyl.
Claim 7
Dependent Claim
12 words
The process of claim 5, wherein M 1 R a is trimethylindium.
Claim 8
Dependent Claim
10 words
The process of claim 1, wherein M 2 is lithium.
Claim 9
Dependent Claim
9 words
The process of claim 1, wherein X is chloride.
Claim 10
Dependent Claim
18 words
The process of claim 1, wherein the product of said process contains nondetectable amounts of silicon and zinc.
Claim 11
Dependent Claim
18 words
The process of claim 1, wherein the product of said process contains nondetectable amounts of volatile organometallic impurities.
Claim 12
Dependent Claim
32 words
The process of claim 1, wherein the product of said process is suitable for growing a semiconductor layer having an electron mobility at 77° K. of at least 131,000 cm 2 /V.s.
Claim 13
Dependent Claim
39 words
The process of claim 1, wherein said forming step is carried out by reacting an impure starting material of formula: M.sup.1 R.sub.a with a less than stoichiometric amount of an adducting reagent to preferentially form said nonvolatile intermediate compound.