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US4963510A
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Method and apparatus for providing interconnection between metallization layers on semiconductors devices
Assignee: Texas Instruments Inc
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Filing: 1989-07-27
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Granted: 1990-10-16
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Expires: 2009-07-27
Abstract
Abstract A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18) is then applied and a cavity (22) is formed within the photoresist (18). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).
Inventors
- 👤 Bobby A. Roane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/064; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
80 words
A method for interconnecting metallization levels separated by an insulator on semiconductor devices, comprising the steps of: forming a diffusion barrier over a first level of metallization; forming a photoresist layer over said diffusion barrier; forming a cavity in said photoresist; filling the cavity with a conductor to form a solid stud over said diffusion barrier; stripping the remaining photoresist; and applying an insulator such that the stud extends through the insulator for connection to a second level of metallization.
Claim 2
Independent Claim
80 words
A method for interconnecting metallization levels separated by an insulator on semiconductor devices, comprising the steps of: forming a diffusion barrier over a first level of metallization; forming a photoresist layer over said diffusion barrier; forming a cavity in said photoresist; filling the cavity with a conductor to form a solid stud over said diffusion barrier; stripping the remaining photoresist; and applying an insulator such that the stud extends through the insulator for connection to a second level of metallization.
Claim 3
Dependent Claim
45 words
The method for interconnecting metallization levels of claim 1, wherein the step of separating the stud from the first level by a diffusion barrier comprises the steps of: sputtering a refractory metal onto said first level; and sputtering a metal cap over said refractory metal.
Claim 4
Dependent Claim
30 words
The method for interconnecting metallization levels of claim 1, further comprising after the step of stripping the remaining photoresist the step of: cladding the stud with a corrosion preventing material.
Claim 5
Dependent Claim
30 words
The method for interconnecting metallization levels of claim 3, wherein the step of filling the cavity with a conductor to form the stud comprises electroplating the conductor into the cavity.
Claim 6
Dependent Claim
31 words
The method for interconnecting metallization levels of claim 3, wherein the step of filling the cavity with a conductor to form the stud comprises emersion plating the conductor into the cavity.
Claim 7
Dependent Claim
31 words
The method for interconnecting metallization levels of claim 3 wherein the step of filling the cavity with a conductor to form the stud comprises electroless plating the conductor into the cavity.
Claim 8
Dependent Claim
18 words
The method for interconnecting metallization levels of claim 3, wherein stripping the remaining photoresist comprises chemical wet stripping.
Claim 9
Dependent Claim
17 words
The method for interconnecting metallization levels of claim 3, wherein stripping the remaining photoresist comprises dry stripping.
Claim 10
Dependent Claim
48 words
The method for connecting metallization levels of claim 3, wherein the step of cladding the stud comprises: heating the semiconductor device in a pressure chamber; and passing a gas containing the corrosion preventing material over the heated semiconductor device so that the corrosion preventing material covers the stud.
Claim 11
Dependent Claim
24 words
The method for connecting metallization levels of claim 1, wherein the step of applying an insulator comprises coating the semiconductor device by plasma enhancement.
Claim 12
Dependent Claim
25 words
The method for connecting metallization levels of claim 1, wherein the step of applying an insulator comprises coating the semiconductor device by chemical vapor deposition.
Claim 13
Independent Claim
132 words
A method of forming a conductor which passes through an insulator to interconnect metallization levels on a semiconductor device, comprising the steps of: blanketing a lead on a first level of metallization of the semiconductor device with a diffusion barrier; blanketing the diffusion barrier with a photoresist and forming a cavity in the photoresist at a predesignated location; plating a conductor into said cavity to form a stud over the diffusion barrier in the cavity; stripping the photoresist and etching the diffusion barrier to leave the diffusion barrier under the stud only; cladding the stud and the lead with a corrosion preventing material; and applying an insulator over the first level so that the stud protrudes through the insulator for making contact with a second level of metallization of the semiconductor device.
Claim 14
Independent Claim
132 words
A method of forming a conductor which passes through an insulator to interconnect metallization levels on a semiconductor device, comprising the steps of: blanketing a lead on a first level of metallization of the semiconductor device with a diffusion barrier; blanketing the diffusion barrier with a photoresist and forming a cavity in the photoresist at a predesignated location; plating a conductor into said cavity to form a stud over the diffusion barrier in the cavity; stripping the photoresist and etching the diffusion barrier to leave the diffusion barrier under the stud only; cladding the stud and the lead with a corrosion preventing material; and applying an insulator over the first level so that the stud protrudes through the insulator for making contact with a second level of metallization of the semiconductor device.
Claim 15
Dependent Claim
63 words
The method of forming a conductor of claim 12, in which the semiconductor device further includes a field oxide layer upon which the first level of metallization is constructed, wherein the step of blanketing a first level of metallization with a diffusion barrier comprises sputtering on a layer of a refractory metal and then sputtering on a layer of a platable metal cap.
Claim 16
Dependent Claim
52 words
The method of forming a conductor of claim 12, wherein the step of blanketing the diffusion barrier with a photoresist and forming a cavity comprises spinning on the photoresist, exposing the photoresist to create a pattern, and removing said patterned photoresist to form a cavity in the photoresist to the diffusion barrier.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |