US4789647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
Assignee: US Philips Corp
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Filing: 1987-01-07
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Granted: 1988-12-06
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Expires: 2007-01-07
Abstract
Abstract A method of manufacturing a semiconductor device comprising a semiconductor body (1), of which a surface (13) is provided with a metallization (15,16,17,18) with a thick connection electrode (19). The metallization is formed in a first metal layer (49) and the connection electrode is formed in a second metal layer (51). Between these metal layers is provided a third metal layer (50), which serves as an etching stopper during the formation of the connection electrode. During a single deposition step, the three metal layers (49,50,51) are provided, after which first the connection electrode and then the metallization are formed by etching. By providing the three metal layers in a single deposition step, the number of processing steps for manufacturing the semiconductor device is limited and it is moreover achieved that the adhesion between connection electrode (19) and metallization (15,16,17,18) is an optimum.
Inventors
- 👤 Johannes S. Peters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:26
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/251
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
245 words
A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor body having respective transistor zones, forming an insulating layer on said semiconductor body, said insulating layer having openings to at least some of said transistor zones, successively forming at least three metal layers on said insulating layer, said at least three metal layers including a first thin metal layer, a second thick metal layer, and a third thin metal layer formed between said first thin metal layer and said second thick metal layer, Wherein said second thick metal layer is formed with a thickness ranging from about 30 to 60 μm, said first thin metal layer is formed with a thickness ranging from about 3-6 μm, and said third thin metal layer is formed with a thickness ranging from about 0.1-0.3 μm, forming a masking layer on parts of said second thick metal layer, etching said second thick metal layer at unmarked parts to said third thin metal layer, said third thin metal layer acting on an etching stopper, forming a second masking layer on parts of said third thin metal layer and remaining parts of said second thick metal layer, etching exposed parts of said third thin metal layer and underlying parts of said first thin metal layer, forming a second insulating layer over the entire structure, and etching at least a part of said second insulating layer on said second thick metal layer to form a thick connection electrode.
Claim 2
Independent Claim
245 words
A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor body having respective transistor zones, forming an insulating layer on said semiconductor body, said insulating layer having openings to at least some of said transistor zones, successively forming at least three metal layers on said insulating layer, said at least three metal layers including a first thin metal layer, a second thick metal layer, and a third thin metal layer formed between said first thin metal layer and said second thick metal layer, Wherein said second thick metal layer is formed with a thickness ranging from about 30 to 60 μm, said first thin metal layer is formed with a thickness ranging from about 3-6 μm, and said third thin metal layer is formed with a thickness ranging from about 0.1-0.3 μm, forming a masking layer on parts of said second thick metal layer, etching said second thick metal layer at unmarked parts to said third thin metal layer, said third thin metal layer acting on an etching stopper, forming a second masking layer on parts of said third thin metal layer and remaining parts of said second thick metal layer, etching exposed parts of said third thin metal layer and underlying parts of said first thin metal layer, forming a second insulating layer over the entire structure, and etching at least a part of said second insulating layer on said second thick metal layer to form a thick connection electrode.
Claim 3
Dependent Claim
35 words
A method according to claim 1, wherein said first thin metal layer is formed of silver, said third thin metal layer is formed of titanium, and said second thick metal layer is formed of silver.
Claim 4
Dependent Claim
26 words
A method according to claim 1 or claim 2, wherein a metal adhesive layer is formed on said insulating layer before forming said three metal layers.
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein said metal adhesive layer is formed with a thickness ranging from about 50-150 nm.
Claim 6
Dependent Claim
21 words
A method according to claim 2, wherein said second thick metal layer is formed with a thickness of about 50 μm.
References Cited (Backward Citations)
US3393091A
Cited
US3386894A
Cited
US3551196A
Cited
US3650826A
Cited
US3761309A
Cited
US4187599A
Cited
US4042954A
Cited
US4042951A
Cited
US4410622A
Cited
US4576678A
Cited
US4299680A
Cited
US4505029A
Cited
US4396900A
Cited
US4507852A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-06 | 1992-06-06 | 1992-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-06 | 1996-06-06 | 1996-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-06 | 2000-06-06 | 2000-12-06 | $7700.00 | Window Closed / Lapsed |