Process for forming vias on integrated circuits

Claim 2

A process for forming vias in an integrated circuit, said process comprising the steps of: (a) forming a layer of a first metal on a semiconductor substrate; (b) forming a layer of a second metal on said said first metal layer; (c) etching said second metal layer in a predetermined via pattern with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal; and (d) forming said vias in predetermined spacial relationship with a predetermined interconnect pattern by etching said first metal layer, in said predetermined interconnect pattern, with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal or with said semiconductor substrate

Claim 3

The process in accordance with claim 1 wherein said first metal comprises tungsten, said first etchant comprises a fluorine based dry etchant, said second metal comprises aluminum and said second etchant comprises a chlorine base dry etchant.

Claim 4

The process in accordance with claim 1 wherein said first metal comprises aluminum, said first etchant comprises a chlorine based dry etchant, said second metal comprises tungsten and said second etchant comprises a fluorine based dry etchant.

Claim 5

The process, in accordance with claim 1 for forming vias posts, said process additionally comprising the steps of: (e) forming a first dielectric layer on said semiconductor substrate over said interconnects and said posts; and (f) forming a substantially planar surface on said first dielectric layer, which surface is substantially co-planar with the upper surfaces of said vias, by etching back said dielectric layer using an etchant which reacts with said dielectric material at an etch rate which is greater than the etch rate at which said etchant reacts with said second metal.

Claim 6

The process in accordance with claim 4 wherein said first dielectric layer comprises silicon dioxide and said etchant comprises a fluorine based etchant.

Claim 7

The process in accordance with claim 4 additionally comprising the steps of: (g) forming a third layer of said first metal on said planar surface; (h) etching said third layer in a second predetermined interconnect pattern; and (i) forming a layer of dielectric material over said second predetermined interconnect pattern and said first dielectric layer.

Claim 8

The process in accordance with claim 4 additional comprising the steps of: (g) forming a third layer of said first metal on said planar surface; (h) forming a fourth layer of said second metal on said third layer; (i) etching said fourth layer in a predetermined via post pattern with an etchant which reacts with said second metal and which is substantially unreactive with said first metal; and (j) forming a second set of via posts in predetermined spacial relationship with a second predetermined interconnect pattern by etching said third layer, in said predetermined interconnect pattern, with an etchant which reacts with said first metal and which is substantially unreactive with said second metal or with said dielectric material.

Claim 9

The process in accordance with claim 7 additionally comprising the steps of: (k) forming a second dielectric layer on said first dielectric layer over said interconnects and vias; and (l) forming a substantially planar surface in said second dielectric layer, which surface is substantially co-planar with the upper surfaces of said second set of vias, by etching back said second dielectric layer using an etchant which reacts with said dielectric material at an etch rate which is greater than the etch rate at which said etchant reacts with said second metal.

Claim 10

The process in accordance with claim 8 wherein steps (g) through (l) are repeated at least once to form at least a third set of vias and at least a third predetermined interconnect pattern and additionally comprising the steps of: (m) forming a top layer of said first metal on the uppermost planar surface; (n) etching said top layer in a final predetermined interconnect pattern; and (o) forming a top layer of dielectric material over said final predetermined interconnect pattern and the uppermost dielectric layer.

Claim 11

A process for fabricating a multilevel integrated circuit, said process comprising the steps of: (a) forming a first layer of metal on a semiconductor substrate; (b) forming a first level of interconnects in said first metal layer in a first predetermined pattern; (c) forming a layer of a first dielectric material on said semiconductor substrate over said first level of interconnects; (d) forming a substantially planar surface on said first dielectric layer, which surface is substantially co-planar with the upper surfaces of said first level of interconnects, by etching back said dielectric layer using an etchant which reacts with said dielectric material and not with the interconnect material; (e) forming a layer of a second dielectric material on said surface of said first dielectric material over the upper surfaces of said first level interconnects; (f) etching a predetermined pattern of via apertures in said second dielectric layer, using an etchant which reacts with said second dielectric material and which is substantially unreactive with said first dielectric material and said first level interconnect material; (g) forming a second layer of metal over said second dielectric material, which layer of metal extends into said via apertures and contacts the upper surfaces of said first level interconnects; and (h) forming a second level of interconnects in said second metal layer in a second predetermined interconnect pattern having predetermined contacting relationship with said first level of interconnects through said via apertures.

Claim 12

A process for fabricating a multilevel integrated circuit, said process comprising the steps of: (a) forming a first layer of metal on a semiconductor substrate; (b) forming a first level of interconnects in said first metal layer in a first predetermined pattern; (c) forming a layer of a first dielectric material on said semiconductor substrate over said first level of interconnects; (d) forming a substantially planar surface on said first dielectric layer, which surface is substantially co-planar with the upper surfaces of said first level of interconnects, by etching back said dielectric layer using an etchant which reacts with said dielectric material and not with the interconnect material; (e) forming a layer of a second dielectric material on said surface of said first dielectric material over the upper surfaces of said first level interconnects; (f) etching a predetermined pattern of via apertures in said second dielectric layer, using an etchant which reacts with said second dielectric material and which is substantially unreactive with said first dielectric material and said first level interconnect material; (g) forming a second layer of metal over said second dielectric material, which layer of metal extends into said via apertures and contacts the upper surfaces of said first level interconnects; and (h) forming a second level of interconnects in said second metal layer in a second predetermined interconnect pattern having predetermined contacting relationship with said first level of interconnects through said via apertures.

Claim 13

The process in accordance with claim 10 additionally comprising the step of forming a layer of dielectric material over said second predetermined interconnect pattern and said second dielectric material.

Claim 14

The process in accordance with claim 10 wherein steps (c) through (h) are repeated at least once to form at least a third level of interconnects in predetermined contacting relationship with said second level of interconnects and additionally comprising the step of forming a top layer of dielectric material over said final level of interconnects.

Claim 15

A process for forming vias in an integrated circuit, said integrating circuit including at least one insulating layer having an exposed contact region formed therein, said process comprising the steps of: (a) forming a layer of a first metal on said insulating layer and into contact with said exposed contact region; (b) forming at layer of a second metal on said first metal layer; (c) etching said second metal layer, with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal, in a predetermined via pattern with at least one via having an area which is at least substantially equal to the area of an underlying contact region and which is substantially aligned therewith in covering spacial relationship thereto; (d) forming said vias in predetermined spacial relationship with a predetermined interconnect pattern by etching said first metal layer, in said predetermined interconnect pattern, with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal or with said semiconductor substrate.

Claim 16

A process for forming vias in an integrated circuit, said integrating circuit including at least one insulating layer having an exposed contact region formed therein, said process comprising the steps of: (a) forming a layer of a first metal on said insulating layer and into contact with said exposed contact region; (b) forming at layer of a second metal on said first metal layer; (c) etching said second metal layer, with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal, in a predetermined via pattern with at least one via having an area which is at least substantially equal to the area of an underlying contact region and which is substantially aligned therewith in covering spacial relationship thereto; (d) forming said vias in predetermined spacial relationship with a predetermined interconnect pattern by etching said first metal layer, in said predetermined interconnect pattern, with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal or with said semiconductor substrate.

Claim 17

The process in accordance with claim 13 additionally comprising the steps of: (e) forming a first dielectric layer over said interconnects and said vias; and (f) forming a substantially planar surface on said first dielectric layer, which surface is substantially co-planar with the upper surfaces of said vias, by etching back said dielectric layer until at least the upper surface of said vias are exposed, using an etchant which reacts with said dielectric material at an etch rate which is greater than the etch rate at which said etchant reacts with said second metal, said exposed upper surfaces forming via contact regions.

Claim 18

The process in accordance with claim 14 additionally comprising the steps of: (g) forming a third layer of said first metal on said planar surface in contact with said via contact regions; (h) etching said third layer in a second predetermined interconnect pattern; and (i) forming a layer of dielectric material over said second predetermined interconnect pattern and said first dielectric layer.

Claim 19

The process in accordance with claim 14 additionally comprising the steps of: (g) forming a third layer of said first metal on said planar surface in contact with said via contact region; (h) forming a fourth layer of said second metal on said third layer; (i) etching said fourth layer, with said second etchant, in a predetermined via pattern with at least one via having an area which is at least substantially equal to the area of an underlying via contact region and which is substantially aligned therewith in covering spacial relationship thereto; and (j) forming a second set of vias in predetermined spacial relationship with a second predetermined interconnect pattern by etching said third layer, in said predetermined interconnect pattern, with said etchant.

Claim 20

The process in accordance with claim 16 additional comprising the steps of: (k) forming a second dielectric layer on said first dielectric layer over said interconnects and said vias; and (l) forming a substantially planar surface on said second dielectric layer, which surface is substantially co-planar with the upper surfaces of said vias, by etching back said dielectric layer until at least the upper surface of said vias are exposed, using an etchant which reacts with said dielectric material at an etch rate which is greater than the etch rate at which etchant reacts with second metal, said exposed upper surfaces forming via contact regions.

Claim 21

The process in accordance with claim 17 wherein steps (g) through (l) are repeated at least once to form at least a third set of vias and at least a third predetermined interconnect pattern and additionally comprising the steps of: (m) forming a top layer of said first metal on the uppermost planar surface; (n) etching said top layer in a final predetermined interconnect pattern; and (o) forming a top layer of dielectric material over said final predetermined interconnect pattern and the uppermost dielectric layer.

Claim 22

A process of forming vias in an integrated circuit, said process comprising the steps of: (a) forming a first layer of a first metal on a semiconductor substrate; (b) forming a second layer of a second metal on said first metal layer; (c) etching a predetermined interconnect pattern in said second metal layer with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal; (d) etching said first metal layer in said predetermined interconnect pattern with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal and with said material which underlies said first metal layer; (e) etching a predetermined pattern of vias in said second metal layer with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal and said underlying material.

Claim 23

A process of forming vias in an integrated circuit, said process comprising the steps of: (a) forming a first layer of a first metal on a semiconductor substrate; (b) forming a second layer of a second metal on said first metal layer; (c) etching a predetermined interconnect pattern in said second metal layer with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal; (d) etching said first metal layer in said predetermined interconnect pattern with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal and with said material which underlies said first metal layer; (e) etching a predetermined pattern of vias in said second metal layer with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal and said underlying material.

Claim 24

A process of forming vias in an integrated circuit, said process comprising the steps of: (a) forming a first layer of a first metal on a semiconductor substrate; (b) forming a second layer of a second metal on said first metal layer; (c) etching said second metal layer in a predetermined pattern with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal; (d) etching a predetermined interconnect pattern in said second metal layer with said second etchant whereby vias are formed at the 15 intersections of said pattern and said predetermined interconnect pattern; (e) etching said first metal layer in said predetermined interconnect pattern with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal and with said material which underlies said first metal layers.

Claim 25

A process of forming vias in an integrated circuit, said process comprising the steps of: (a) forming a first layer of a first metal on a semiconductor substrate; (b) forming a second layer of a second metal on said first metal layer; (c) etching said second metal layer in a predetermined pattern with a second etchant which reacts with said second metal and which is substantially unreactive with said first metal; (d) etching a predetermined interconnect pattern in said second metal layer with said second etchant whereby vias are formed at the 15 intersections of said pattern and said predetermined interconnect pattern; (e) etching said first metal layer in said predetermined interconnect pattern with a first etchant which reacts with said first metal and which is substantially unreactive with said second metal and with said material which underlies said first metal layers.