EP0129389A2
Expired / Lapsed
EP
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A method of producing a layered structure
Assignee: Plessey Semiconductors Ltd
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Filing: 1984-06-11
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Granted: —
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Expires: 2004-06-11
Abstract
Abstract A method of forming a layered structure, which method comprises depositing in superposition on a substrate, a first metal layer, a barrier layer and a second metal layer, etching the first and second metal layers and the barrier layer in accordance with a first masking pattern, etching the second metal layer in accordance with a second masking pattern, depositing a dielectric layer, etching the dielectric layer to expose the second metal layer, and depositing a further metal layer to contact the exposed second metal layer.
Inventors
- 👤 Stephen James Rhodes
- 👤 Raymond Edward Oakley
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 21:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/031; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
97 words
A method of forming a layered structure, which method comprises depositing in superposition on a substrate (4) a first metal layer (2), a barrier layer (6) and a second metal layer (8), etching the first and second metal layers (2,8) and the barrier layer (6) in accordance with a first masking pattern, etching the second metal layer (8) in accordance with a second masking pattern, depositing a dielectric layer (12), etching the dielectric layer (12) to expose the second metal layer (8), and depositing a further metal layer (14) to contact the exposed second metal layer (8).
Claim 2
Independent Claim
97 words
A method of forming a layered structure, which method comprises depositing in superposition on a substrate (4) a first metal layer (2), a barrier layer (6) and a second metal layer (8), etching the first and second metal layers (2,8) and the barrier layer (6) in accordance with a first masking pattern, etching the second metal layer (8) in accordance with a second masking pattern, depositing a dielectric layer (12), etching the dielectric layer (12) to expose the second metal layer (8), and depositing a further metal layer (14) to contact the exposed second metal layer (8).
Claim 3
Dependent Claim
27 words
A method according to claim 1 characterised by selectively repeating the method until the further metal layer (14) comprises the final metal layer of the layered structure.
Claim 4
Dependent Claim
23 words
A method according to claim 1 characterised in that the further metal layer (14) comprises the final metal layer of the layered structure.
Claim 5
Dependent Claim
21 words
A method according to claim 2 or 3 characterised by etching the final metal layer (14) to remove unwanted metal therefrom.
Claim 6
Independent Claim
22 words
A method according to any one of the preceding claims characterised in that the layers (2,6,8,12,14) are etched by anisotropic plasma etching.
Claim 7
Dependent Claim
20 words
A method according to claim 5 characterised in that the metal layers (2,8,14) are etched by carbon tetrachloride plasma etching.
Claim 8
Dependent Claim
22 words
A method according to claim 5 characterised in that the barrier layer (6) is etched by carbon tetrachloride and oxygen plasma etching.
Claim 9
Independent Claim
19 words
A method according to any one of the preceding claims characterised in that the metal layers (2,8,14) comprise aluminium.
Claim 10
Independent Claim
19 words
A method according to any one of the preceding claims characterised in that the dielectric layer (12) comprises polyimide.
Claim 11
Independent Claim
19 words
A method according to any one of the preceding claims characterised in that the barrier layer (6) comprises chromium.
References Cited (Backward Citations)
No citation records indexed.
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