Patent US2816877A successfully refreshed from Google Patents.
Patent US4962065A successfully refreshed from Google Patents.
US4962065A
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Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
Assignee: University of Arkansas at Little Rock
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Filing: 1990-02-09
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Granted: 1990-10-09
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Expires: 2010-02-09
Abstract
Abstract A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C. to about 700° C. and at times ranging from about 3 seconds to about 30 seconds.
Inventors
- 👤 William D. Brown
- 👤 Muhammad A. Khaliq
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:58
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
77 words
In a method, the steps of: (a) depositing a layer of silicon nitride on a substrate by means of plasma enhanced chemical vapor deposition techniques; and (b) rapid thermal annealing the silicon nitride layer within a temperature range and a time period range sufficient to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 2
Dependent Claim
77 words
In a method, the steps of: (a) depositing a layer of silicon nitride on a substrate by means of plasma enhanced chemical vapor deposition techniques; and (b) rapid thermal annealing the silicon nitride layer within a temperature range and a time period range sufficient to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 3
Dependent Claim
17 words
In the method of claim 1, wherein the layer of silicon nitride is a thin film layer.
Claim 4
Dependent Claim
17 words
In the method of claim 1, wherein the temperature range is from about 600°C. to about 700°C.
Claim 5
Dependent Claim
20 words
In the method of claim 1, wherein the time period range is from about 3 seconds to about 30 seconds.
Claim 6
Dependent Claim
14 words
In the method of claim 1, wherein annealing takes place in a nitrogen atmosphere.
Claim 7
Dependent Claim
11 words
In the method of claim 1, wherein the substrate is silicon.
Claim 8
Dependent Claim
21 words
In the method of claim 6, wherein the layer of silicon nitride has a thickness of less than about 1000 angstroms.
Claim 9
Dependent Claim
104 words
In a method for producing a stable layer of silicon nitride on a silicon substrate, the steps of: (a) depositing a thin film layer of silicon nitride on a silicon substrate by means of plasma enhanced chemical vapor deposition; and (b) rapid thermal annealing the silicon nitride film within a temperature range of about 600°C. to about 700°C. and a time period of from about 3 seconds to about 30 seconds to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 10
Dependent Claim
104 words
In a method for producing a stable layer of silicon nitride on a silicon substrate, the steps of: (a) depositing a thin film layer of silicon nitride on a silicon substrate by means of plasma enhanced chemical vapor deposition; and (b) rapid thermal annealing the silicon nitride film within a temperature range of about 600°C. to about 700°C. and a time period of from about 3 seconds to about 30 seconds to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 11
Dependent Claim
14 words
In the method of claim 8, wherein annealing takes place in a nitrogen atmosphere.
Claim 12
Dependent Claim
20 words
In the method of claim 8, wherein the silicon nitride layer has a silicon to nitrogen ratio of about 0.85.
Claim 13
Independent Claim
92 words
A method comprising the steps of: (a) depositing a layer of silicon nitride on a substrate by means of plasma enhanced chemical vapor deposition techniques in an atmosphere having ammonia and silane in a ratio of about 0.8 ammonia to silane; and (b) rapid thermal annealing of the silicon layer within a temperature range and a time period sufficient to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stabile with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 14
Independent Claim
92 words
A method comprising the steps of: (a) depositing a layer of silicon nitride on a substrate by means of plasma enhanced chemical vapor deposition techniques in an atmosphere having ammonia and silane in a ratio of about 0.8 ammonia to silane; and (b) rapid thermal annealing of the silicon layer within a temperature range and a time period sufficient to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stabile with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 15
Dependent Claim
15 words
The method of claim 11, wherein said silicon nitride layer is a thin film layer.
Claim 16
Dependent Claim
13 words
The method of claim 12, wherein said temperature range if from about 600°C.
Claim 17
Dependent Claim
20 words
The method of claim 13, wherein the time range for annealing is from about 3 seconds to about 60 seconds.
Claim 18
Independent Claim
136 words
A method for producing thin film layers of silicon nitride suitable for use in a gate dielectric comprising the steps of: (a) providing a suitable substrate including a semiconductor material; (b) depositing a thin film layer of silicon nitride on the substrate via plasma enhanced chemical vapor deposition techniques in an atmosphere having ammonia and silane in a ratio of about 0.8 ammonia to silane; and (c) rapid thermal annealing of the silicon nitride layer in a suitable nitrogen atmosphere within a temperature range from about 600°C. to about 700°C. and within a time period from about 3 seconds to about 60 seconds to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
Claim 19
Independent Claim
136 words
A method for producing thin film layers of silicon nitride suitable for use in a gate dielectric comprising the steps of: (a) providing a suitable substrate including a semiconductor material; (b) depositing a thin film layer of silicon nitride on the substrate via plasma enhanced chemical vapor deposition techniques in an atmosphere having ammonia and silane in a ratio of about 0.8 ammonia to silane; and (c) rapid thermal annealing of the silicon nitride layer in a suitable nitrogen atmosphere within a temperature range from about 600°C. to about 700°C. and within a time period from about 3 seconds to about 60 seconds to increase an N--H bond concentration of the silicon nitride to produce a layer of silicon nitride that is stable with respect to charge transfer hysteresis between the silicon nitride and the substrate.
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