US4960729A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuits and a method for manufacture thereof
Assignee: Quick Tech Ltd
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Filing: 1989-12-07
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Granted: 1990-10-02
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Expires: 2009-12-07
Abstract
Abstract A technique for providing a radiation formable conductive link in an integrated circuit comprising the steps of: depositing a plurality of aluminum conductors on an exposed surface of an otherwise completed integrated circuit, and forming a bridge of amorphous silicon layer joining the aluminum conductors at selected locations, whereby subsequent laser radiation produces diffusion of aluminum into the amorphous silicon, producing a highly conductive aluminum doped silicon bridge.
Inventors
- 👤 Zvi Orbach
- 👤 Meir I. Janai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492; H10W20/01; H10W20/031; H10W20/067; H10W20/068
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
102 words
A technique for providing a direct radiation formable conductive link between first and second metal layers in an integrated circuit comprising the steps of: providing a first patterned metal layer on a substrate; providing an insulation layer over first patterned metal layer; providing a second patterned metal layer over said insulation layer; forming an aperture in said insulation layer through which adjacent, non-contacting portions of said first patterned metal layer and said second patterned metal layer are exposed; and after completion of all preceding steps, providing a layer of amorphous silicon contacting said first and second pattern metal layers at said aperture.
Claim 2
Dependent Claim
102 words
A technique for providing a direct radiation formable conductive link between first and second metal layers in an integrated circuit comprising the steps of: providing a first patterned metal layer on a substrate; providing an insulation layer over first patterned metal layer; providing a second patterned metal layer over said insulation layer; forming an aperture in said insulation layer through which adjacent, non-contacting portions of said first patterned metal layer and said second patterned metal layer are exposed; and after completion of all preceding steps, providing a layer of amorphous silicon contacting said first and second pattern metal layers at said aperture.
Claim 3
Dependent Claim
37 words
A technique according to claim 1 further comprising the step of selectably applying radiation directly to the layer of amorphous silicon for producing a conductive bridge joining said first and second patterned metal layers at said aperture.
Claim 4
Dependent Claim
17 words
A technique according to claim 1 further comprising the step of doping said layer of amorphous silicon.
Claim 5
Dependent Claim
17 words
A technique according to claim 2 further comprising the step of doping said layer of amorphous silicon.
Claim 6
Dependent Claim
22 words
A technique according to claim 3 wherein said step of doping comprises doping said layer of amorphous silicon with a p-type dopant.
Claim 7
Dependent Claim
12 words
A technique according to claim 5 wherein said type dopant comprises boron.
Claim 8
Dependent Claim
19 words
A technique according to claim 2 wherein said step of applying radiation comprises producing a doped silicon conductive bridge.
Claim 9
Dependent Claim
21 words
A technique according to claim 1 further comprising the step of providing an anti-reflective coating over the layer of amorphous silicon.
Claim 10
Dependent Claim
21 words
A technique according to claim 2 further comprising the step of providing an anti-reflective coating over the layer of amorphous silicon.
Claim 11
Dependent Claim
44 words
A technique according to claim 2, wherein said first and second patterned metal layers comprise aluminum conductors, and wherein said step of applying radiation comprises applying laser radiation to a selected layer of amorphous silicon, and producing a conductive pathway between said aluminum conductors.
Claim 12
Dependent Claim
45 words
A technique according to claim 2, wherein said first and second patterned metal layers comprise aluminum conductors, and wherein said step of applying radiation comprises applying ion beam radiation to a selected layer of amorphous silicon, and producing a conductive pathway between said aluminum conductors.
Claim 13
Dependent Claim
45 words
A technique according to claim 2, wherein said first and second patterned metal layers comprise aluminum conductors, and wherein said step of applying radiation comprises applying electron beam radiation to a selected layer of amorphous silicon, and producing a conductive pathway between said aluminum conductors.
Claim 14
Dependent Claim
13 words
A technique according to claim 8 wherein said anti-reflective coating comprises silicon nitride.
Claim 15
Dependent Claim
29 words
A technique according to claim 2 wherein said step of applying radiation includes the step of causing diffusion of said patterned metal layers into the layer of amorphous silicon.
Claim 16
Dependent Claim
24 words
A technique according to claim 2 wherein said step of applying radiation includes the step of causing crystallization of the layer of amorphous silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-01 | 1994-04-02 | 1994-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-01 | 1998-04-02 | 1998-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-01 | 2002-04-02 | 2002-10-02 | $7700.00 | Window Closed / Lapsed |