US4960727A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a dielectric filled trench
Assignee: Motorola Solutions Inc
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Filing: 1988-11-18
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Granted: 1990-10-02
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Expires: 2008-11-18
Abstract
Abstract A structure and method for forming an isolation wall in an etched trench are described. The trench walls are covered by a thin silicon oxide layer and the trench conformally filled with an oxy-nitride mixture having a particular range of composition so as to produce a neutral to slight tensile stress in the oxy-nitride relative to silicon. The structure is very simple to fabricate and creates fewer defects in the silicon substrate than prior art techniques. Buried voids in the filled trench are eliminated.
Inventors
- 👤 Robert Mattox
- 👤 Steven Fong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:02
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
87 words
A method for forming an isolation wall in a semiconductor device, comprising: providing a semiconductor substrate having a surface; forming a trench having a sidewall and a bottom extending into said substrate from said surface; conformally filling said trench with a silicon oxy-nitride; covering said silicon oxy-nitride in said trench with a silicon nitride layer; and etching a central seam extending into said oxy-nitride in said trench and then filling said seam and completely covering the upper surface of said oxy-nitride in said trench with silicon nitride.
Claim 2
Independent Claim
87 words
A method for forming an isolation wall in a semiconductor device, comprising: providing a semiconductor substrate having a surface; forming a trench having a sidewall and a bottom extending into said substrate from said surface; conformally filling said trench with a silicon oxy-nitride; covering said silicon oxy-nitride in said trench with a silicon nitride layer; and etching a central seam extending into said oxy-nitride in said trench and then filling said seam and completely covering the upper surface of said oxy-nitride in said trench with silicon nitride.
Claim 3
Independent Claim
183 words
A method for forming an isolation wall in a semiconductor device, comprising: providing a semiconductor substrate having a surface; forming a trench having a side wall and a bottom extending into said substrate from said surface; forming a silicon oxide layer in said trench by thermally oxidizing said surface, said sidewall, and said bottom; conformally filling said trench with a silicon oxy-nitride, wherein said filling step comprises filling said trench and covering part of said silicon oxide layer with said oxy-nitride; covering said silicon oxy-nitride in said trench with the silicon nitride layer; covering said oxy-nitride with a planarizing material and etching said planarizing material and said oxy-nitride substantially back to said surface, wherein said step of etching said planarizing material and said oxy-nitride from said surface comprises removing silicon oxide from said surface and thereafter reforming silicon oxide on said surface; forming a silicon cap layer on said reformed silicon oxide and said oxy-nitride, wherein an open crevice is etched centrally in said oxy-nitride and wherein said step of forming said cap layer comprises forming said cap layer in said open crevice.
Claim 4
Independent Claim
183 words
A method for forming an isolation wall in a semiconductor device, comprising: providing a semiconductor substrate having a surface; forming a trench having a side wall and a bottom extending into said substrate from said surface; forming a silicon oxide layer in said trench by thermally oxidizing said surface, said sidewall, and said bottom; conformally filling said trench with a silicon oxy-nitride, wherein said filling step comprises filling said trench and covering part of said silicon oxide layer with said oxy-nitride; covering said silicon oxy-nitride in said trench with the silicon nitride layer; covering said oxy-nitride with a planarizing material and etching said planarizing material and said oxy-nitride substantially back to said surface, wherein said step of etching said planarizing material and said oxy-nitride from said surface comprises removing silicon oxide from said surface and thereafter reforming silicon oxide on said surface; forming a silicon cap layer on said reformed silicon oxide and said oxy-nitride, wherein an open crevice is etched centrally in said oxy-nitride and wherein said step of forming said cap layer comprises forming said cap layer in said open crevice.
Claim 5
Dependent Claim
20 words
The method of claim 2 further comprising removing said cap layer and said reformed silicon oxide from above said surface.
Claim 6
Independent Claim
120 words
A method for forming a dielectric filled trench in a substrate, comprising: providing a substrate having a principal surface; etching a trench in the substrate where the trench has a bottom displaced from the surface and a sidewall extending therebetween; filling the trench by conformally depositing a silicon oxy-nitride on the surface, the sidewalls and the bottom of the trench; removing the silicon oxy-nitride from above the surface leaving the silicon oxy-nitride in the trench; applying a silicon nitride layer above the surface and on the silicon oxy-nitride in the trench; removing at least part of the silicon nitride layer above the surface leaving at least part of the silicon nitride layer completely covering the silicon oxy-nitride in the trench.
Claim 7
Independent Claim
120 words
A method for forming a dielectric filled trench in a substrate, comprising: providing a substrate having a principal surface; etching a trench in the substrate where the trench has a bottom displaced from the surface and a sidewall extending therebetween; filling the trench by conformally depositing a silicon oxy-nitride on the surface, the sidewalls and the bottom of the trench; removing the silicon oxy-nitride from above the surface leaving the silicon oxy-nitride in the trench; applying a silicon nitride layer above the surface and on the silicon oxy-nitride in the trench; removing at least part of the silicon nitride layer above the surface leaving at least part of the silicon nitride layer completely covering the silicon oxy-nitride in the trench.
Claim 8
Dependent Claim
24 words
The method of claim 4 further comprising, prior to the applying step, exposing the silicon oxy-nitride in the trench to a silicon oxy-nitride etchant.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-01 | 1994-04-02 | 1994-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-01 | 1998-04-02 | 1998-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-01 | 2002-04-02 | 2002-10-02 | $7700.00 | Window Closed / Lapsed |