Silicon-oxygen-nitrogen layers for semiconductor devices

Claim 2

IN A SEMICONDUCTOR DEVICE OF THE TYPE WHICH INCLUDES A SUBSTRATE OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE AND A REGION OF OPPOSITE CONDUCTIVITY TYPE EXTENDING THEREIN AND TO FORM A JUNCTION THERWITH WHICH EXTENDS TO ONE SURFACE OF THE DEVICE, A PROTECTIVE LAYER CARRIED ON SAID ONE SURFACE OF THE DEVICE AND EXTENDING OVER SAID JUNCTION TO PASSIVATE AND PROTECT THE JUNCTION, SAID LAYER COMPRISING A COMPOSITION OF SILICON, OXYGEN AND NITROGEN (SIX OV NZ) IN WHICH

Claim 3

A semiconductor device as in claim 1 wherein the substrate is silicon.

Claim 4

A semiconductor device as in claim 2 wherein said protective insulating layer includes a window over said region of opposite conductivity type and a metal layer overlies a portion of said layer and extends into said window to form ohmic contact with said region.

Claim 5

A semiconductor device including a silicon substrate of one conductivity type, spaced regions of opposite conductivity type extending into said substrate and forming junctions therewith, a protective and insulating layer formed on one surface of said device and extending over said junctions, said layer comprising a composition of silicon, oxygen and nitrogen (Six Oy Nz) in which x 30% to 40% y 45% to 55% z 10% to 20% where x, y and z are The atomic percentages for silicon, oxygen and nitrogen respectively, spaced openings formed in said layer over said regions, metal layers extending over said insulating layer and extending to said regions to make ohmic contact therewith, and an additional metal layer over the portion of the insulating layer between said regions, said metal layers forming source and drain contacts and said additional metal layer forming the gate contact of a metal oxide silicon field effect transistor.

Claim 6

A semiconductor device including a silicon substrate of one conductivity type, spaced regions of opposite conductivity type extending into said substrate and forming junctions therewith, a protective and insulating layer formed on one surface of said device and extending over said junctions, said layer comprising a composition of silicon, oxygen and nitrogen (Six Oy Nz) in which x 30% to 40% y 45% to 55% z 10% to 20% where x, y and z are The atomic percentages for silicon, oxygen and nitrogen respectively, spaced openings formed in said layer over said regions, metal layers extending over said insulating layer and extending to said regions to make ohmic contact therewith, and an additional metal layer over the portion of the insulating layer between said regions, said metal layers forming source and drain contacts and said additional metal layer forming the gate contact of a metal oxide silicon field effect transistor.

Claim 7

A semiconductor device including a silicon substrate of one conductivity type, a region of opposite conductivity type extending into said substrate to form a junction therewith, spaced regions of the same conductivity type extending into said substrate, one of said regions extending into said region of opposite conductivity type to form a junction therewith, a protective insulating layer carried on said one surface extending over said junction to passivate and protect the junction, said layer comprising a composition of silicon, oxygen and nitrogen (Six Oy Nz) in which x 30% to 40% y 45% to 55% z 10% to 20% where x, y and z are the atomic percentages for silicon, oxygen and nitrogen respectively, openings formed in said layer to expose said region of opposite conductivity type and said spaced regions of the same conductivity type, a metal layer having individual portions extending into said openings to contact said regions and carried by the insulating layer, said individual portions defining emitter, base and collector contacts.

Claim 8

A semiconductor device including a silicon substrate of one conductivity type, a region of opposite conductivity type extending into said substrate to form a junction therewith, spaced regions of the same conductivity type extending into said substrate, one of said regions extending into said region of opposite conductivity type to form a junction therewith, a protective insulating layer carried on said one surface extending over said junction to passivate and protect the junction, said layer comprising a composition of silicon, oxygen and nitrogen (Six Oy Nz) in which x 30% to 40% y 45% to 55% z 10% to 20% where x, y and z are the atomic percentages for silicon, oxygen and nitrogen respectively, openings formed in said layer to expose said region of opposite conductivity type and said spaced regions of the same conductivity type, a metal layer having individual portions extending into said openings to contact said regions and carried by the insulating layer, said individual portions defining emitter, base and collector contacts.