Fabrication process for field effect and bipolar transistor devices

Abstract

Abstract A FABRICATION PROCESS FOR MANUFACTURING FIELD EFFECT (FET) OR BIPOLAR TRANSISTOR DEVICES IS DISCLOSED. IN MAKING AN FET DEVICE, THE GATE WINDOW AND THE SOURCE AND DRAIN CONTACT HOLES ARE OPENED UP SIMULTANEOUSLY AFTER THE SOURCE AND DRAIN DIFFUSION OPERATION. THIS SIMULTANEOUS OXIDE ETCHING OPERATION FOR BOTH FET AND BIPOLAR DEVICES IS ACHIEVED AFTER THE PRIOR FORMATION OF AN OPTIMUM DIFFERENTIAL OXIDE THICKNESS OR IN THE SURFACE OF THE SEMICONDUCTOR SUBSTRATE. IN MAKING A BIPOLAR DEVICE, THE EMITTER, BASSE AND COLLECTOR CONTACT HOLES ARE OPENED UP SIMULTANEOUSLY WITHOUT ANY OVER OR UNDER ETCHING OF ANY OF THE HOLES.

Inventors

• 👤 J Sandhu
• 👤 R Maude
• 👤 J Reuter
• 👤 W Brown
• 👤 W Krolikowski

Bibliographic Details