Patent US3396150A successfully refreshed from Google Patents.
Patent US4956043A successfully refreshed from Google Patents.
US4956043A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching apparatus
Assignee: Hitachi Ltd
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Filing: 1988-05-10
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Granted: 1990-09-11
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Expires: 2008-05-10
Abstract
Abstract A dry etching apparatus is disclosed, in which the temperature of an article to be etched, placed on a wafer table, is controlled by a liquefied gas and a heater and the height of the surface of the liquefied gas can be varied arbitrarily. This apparatus enables the controlling of the temperature of the article to be done with a high accuracy over a wide range of low levels. Therefore, a low-temperature dry etching operation, which cannot otherwise be attained by a conventional apparatus of this kind, can be carried out.
Inventors
- 👤 Masafumi Kanetomo
- 👤 Shinichi Tachi
- 👤 Kazunori Tsujimoto
- 👤 Kiichiro Mukai
- 👤 Takahiro Daikoku
- 👤 Shigekazu Kieda
- 👤 Keijiro Shindo
- 👤 Kenshiro Tamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:28
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0432; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
147 words
A dry etching apparatus comprising: a reaction chamber; a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, a means for controlling the temperature of said article to a desired level, said means for controlling the temperature including means for cooling said article, said means for cooling being capable of cooling said article to at least as low as 0° C. and including a liquefied gas, said means for controlling the temperature further including means for heating said wafer table; and a means for regulating the height of said liquefied gas to a desired level in relation to said wafer table.
Claim 2
Dependent Claim
147 words
A dry etching apparatus comprising: a reaction chamber; a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, a means for controlling the temperature of said article to a desired level, said means for controlling the temperature including means for cooling said article, said means for cooling being capable of cooling said article to at least as low as 0° C. and including a liquefied gas, said means for controlling the temperature further including means for heating said wafer table; and a means for regulating the height of said liquefied gas to a desired level in relation to said wafer table.
Claim 3
Dependent Claim
21 words
A dry etching apparatus according to claim 1, wherein said etching apparatus consists of a parallel plate type dry etching apparatus.
Claim 4
Dependent Claim
19 words
A dry etching apparatus according to claim 1, wherein said etching apparatus consists of a microwave plasma etching apparatus.
Claim 5
Dependent Claim
25 words
A dry etching apparatus according to claim 1, wherein a vessel holding said liquefied gas for cooling said article is provided below said wafer table.
Claim 6
Dependent Claim
32 words
A dry etching apparatus according to claim 4, wherein said liquefied gas vessel is provided therein with a sensor for use in controlling the height of the interface of said liquefied gas.
Claim 7
Dependent Claim
21 words
A dry etching apparatus according to claim 1, wherein said means for heating comprises a heater disposed in said wafer table.
Claim 8
Dependent Claim
30 words
A dry etching apparatus according to claim 1, wherein said etching apparatus includes a means for improving the thermal conductivity between said article to be etched and said wafer table.
Claim 9
Dependent Claim
37 words
A dry etching apparatus according to claim 7, wherein said thermal conductivity improving means is a means for bringing said article to be etched and said wafer table into close contact with each other by a spring.
Claim 10
Dependent Claim
23 words
A dry etching apparatus according to claim 8, wherein the upper surface of said wafer table is curved so as to project outward.
Claim 11
Dependent Claim
50 words
A dry etching apparatus according to claim 1, wherein said etching apparatus includes a thermocouple for measuring the temperature of said article, said thermocouple being connected to a temperature measuring instrument through a coil of a low-pass filter consisting of a lead wire or a compensating lead of said thermocouple.
Claim 12
Dependent Claim
26 words
The apparatus of claim 1 wherein said means for controlling temperature controls the temperature of said article in a range of 20° C. to -196° C.
Claim 13
Dependent Claim
100 words
A dry etching apparatus comprising: a reaction chamber, a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, and a means for lowering the temperature of said article to a desired level, at least as low as 0° C., by circulating a low-temperature, liquefied gas in a cooling block provided under said wafer table.
Claim 14
Dependent Claim
100 words
A dry etching apparatus comprising: a reaction chamber, a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, and a means for lowering the temperature of said article to a desired level, at least as low as 0° C., by circulating a low-temperature, liquefied gas in a cooling block provided under said wafer table.
Claim 15
Dependent Claim
96 words
A dry etching apparatus comprising: a reaction chamber, a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, and a means for controlling the temperature of said article to a desired level, at least as low as 0° C., by means of a Peltier element disposed beneath said wafer table.
Claim 16
Dependent Claim
96 words
A dry etching apparatus comprising: a reaction chamber, a means for introducing an etching gas into said reaction chamber, a means for discharging the gas from the interior of said reaction chamber to the outside thereof, a means for generating plasma of said etching gas in the interior of said reaction chamber, a wafer table on which an article to be etched is placed, and a means for controlling the temperature of said article to a desired level, at least as low as 0° C., by means of a Peltier element disposed beneath said wafer table.
Claim 17
Dependent Claim
95 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; and means for controlling a temperature of the article within a range of 20° C. to -196° C.
Claim 18
Dependent Claim
95 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; and means for controlling a temperature of the article within a range of 20° C. to -196° C.
Claim 19
Dependent Claim
22 words
The apparatus of claim 14 further comprising: means for reducing thermal resistance of the contact between said wafer table and an article.
Claim 20
Dependent Claim
149 words
A dry etching apparatus, comprising; a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; and means for controlling a temperature of the article within a range of 20° C. to -196° C. wherein said means for controlling the temperature includes, a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; and a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature.
Claim 21
Dependent Claim
149 words
A dry etching apparatus, comprising; a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; and means for controlling a temperature of the article within a range of 20° C. to -196° C. wherein said means for controlling the temperature includes, a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; and a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature.
Claim 22
Dependent Claim
160 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature; and means for reducing thermal resistance of the contact between said wafer table and an article.
Claim 23
Dependent Claim
160 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature; and means for reducing thermal resistance of the contact between said wafer table and an article.
Claim 24
Dependent Claim
37 words
The apparatus of claim 17 wherein said means for reducing thermal resistance comprises: a plate disposed between said wafer table and the article; and a holding ring for applying a force to the article to be etched.
Claim 25
Dependent Claim
146 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; means for reducing thermal resistance of the contact between said wafer table and an article wherein said means for reducing thermal resistance comprises, a plate disposed between said wafer table and the article; and a holding ring for applying a force to the article to be etched.
Claim 26
Dependent Claim
146 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; means for reducing thermal resistance of the contact between said wafer table and an article wherein said means for reducing thermal resistance comprises, a plate disposed between said wafer table and the article; and a holding ring for applying a force to the article to be etched.
Claim 27
Dependent Claim
187 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature; means for reducing thermal resistance of the contact between said wafer table and an article; wherein said means for reducing thermal resistance comprises said wafer table including an upwardly facing side for contact with the article and having an upwardly projecting arc shape.
Claim 28
Dependent Claim
187 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature; means for reducing thermal resistance of the contact between said wafer table and an article; wherein said means for reducing thermal resistance comprises said wafer table including an upwardly facing side for contact with the article and having an upwardly projecting arc shape.
Claim 29
Dependent Claim
212 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; means for reducing thermal resistance of the contact between said wafer table and an article wherein said means for reducing thermal resistance comprises; a plate disposed between said wafer table and the article; a holding ring for applying a force to the article to be etched; and said wafer table including an upwardly facing side for contact with said plate and having an upwardly projecting arc shape; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; and a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature.
Claim 30
Dependent Claim
212 words
A dry etching apparatus, comprising: a reaction chamber; a wafer table, disposed in said reaction chamber, wherein an article to be etched may be disposed on said table; etching gas supply that supplies gas to the reaction chamber; discharge outlet that removes gas from the reaction chamber; plasma generator; container, disposed beneath said wafer table; liquefied gas disposed in said container and cooling said wafer table; liquefied gas supply source, coupled to said container; a heating element disposed in the wafer table; means for controlling a temperature of the article within a range of 20° C. to -196° C.; means for reducing thermal resistance of the contact between said wafer table and an article wherein said means for reducing thermal resistance comprises; a plate disposed between said wafer table and the article; a holding ring for applying a force to the article to be etched; and said wafer table including an upwardly facing side for contact with said plate and having an upwardly projecting arc shape; a liquid level sensor disposed in said container and detecting the level of the liquefied gas; a thermo-couple for detecting a temperature of the article; and a temperature regulator, responsive to the detected temperature, controlling the operation of the heating element in response to the temperature.
Claim 31
Independent Claim
85 words
An apparatus for controlling a temperature of an article during an etching process; comprising: a wafer table for supporting the article; means, coupled to said wafer table to provide for cooling and heating said wafer table to control a temperature of the article to be between 20° C. and -196° C.; a container disposed beneath said wafer table; a liquefied gas disposed in said container for cooling said wafer table; and a heater disposed in said wafer table for regulating the temperature of the article.
Claim 32
Independent Claim
85 words
An apparatus for controlling a temperature of an article during an etching process; comprising: a wafer table for supporting the article; means, coupled to said wafer table to provide for cooling and heating said wafer table to control a temperature of the article to be between 20° C. and -196° C.; a container disposed beneath said wafer table; a liquefied gas disposed in said container for cooling said wafer table; and a heater disposed in said wafer table for regulating the temperature of the article.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-10 | 1994-03-12 | 1994-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-10 | 1998-03-12 | 1998-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-10 | 2002-03-12 | 2002-09-11 | $7700.00 | Window Closed / Lapsed |