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US4370192A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for chemical etching of silicon

Assignee: AMI Semiconductor Inc
•
Filing: 1980-10-20
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Granted: 1983-01-25
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Expires: 2000-10-20
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Abstract

Abstract Extremely cold gaseous nitrogen is used as a cooling medium in the highly exothermic reaction between a chemical etch solution and silicon. This greatly increases the throughput of silicon material through the etchant over prior art techniques, particularly where it is desired to maintain the temperature of the etchant solution below 25° C.

Inventors

  • 👤 Richard F. Cooley

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 19:35
CPC Classifications
F; F25; F25D; F25D3/00; F25D3/10; C; C23; C23F; C23F1/00; C23F1/08; Y; Y10; Y10S; Y10S134/00; Y10S134/902

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 196 words
Structure for holding an etchant for use in etching semiconductor wafers containing on one surface thereof masking material to protect circuitry formed adjacent said one surface from said etchant comprising: an etchant tank having an inner wall and an outer wall, for containing an etchant for use in etching a material in an exothermic reaction, thereby forming a cooling jacket within said inner and outer walls, said cooling jacket having an inlet and an outlet; a source of coolant gas connected to said inlet of said cooling jacket; temperature detection means for providing a signal indicative of the temperature of said etchant; a vent connected to said outlet; and control means responsive to said signal indicative of the temperature for controlling the flow of said coolant gas through said cooling jacket; whereby said coolant gas removes heat generated in the exothermic reaction between said etchant and the material being etched at a rate selected to maintain the temperature of said etchant beneath a selected value wherein said selected value is selected to ensure that said etchant is maintained at a temperature sufficiently low to prevent masking material protecting circuitry from becoming less effective as a mask.
Claim 2
Dependent Claim 196 words
Structure for holding an etchant for use in etching semiconductor wafers containing on one surface thereof masking material to protect circuitry formed adjacent said one surface from said etchant comprising: an etchant tank having an inner wall and an outer wall, for containing an etchant for use in etching a material in an exothermic reaction, thereby forming a cooling jacket within said inner and outer walls, said cooling jacket having an inlet and an outlet; a source of coolant gas connected to said inlet of said cooling jacket; temperature detection means for providing a signal indicative of the temperature of said etchant; a vent connected to said outlet; and control means responsive to said signal indicative of the temperature for controlling the flow of said coolant gas through said cooling jacket; whereby said coolant gas removes heat generated in the exothermic reaction between said etchant and the material being etched at a rate selected to maintain the temperature of said etchant beneath a selected value wherein said selected value is selected to ensure that said etchant is maintained at a temperature sufficiently low to prevent masking material protecting circuitry from becoming less effective as a mask.
Claim 3
Dependent Claim 146 words
Structure for holding an etchant for use in etching semiconductor wafers comprising: an etchant tank for containing an etchant; a cooling coil located within said etchant tank, said cooling coil having an inlet and an outlet; a source of coolant gas connected to said inlet of said cooling coil; temperature detection means for providing a signal indicative of the temperature of said etchant; a vent connected to said outlet; and control means responsive to said signal from said temperature detection means for controlling the flow of said coolant gas through said cooling coil; whereby said flow of said coolant gas through said cooling coil serves to remove heat generated in the reaction between said etchant and the material being etched thereby to ensure that said etchant is maintained at a temperature sufficiently low to prevent masking material on one surface of said wafers from being removed.
Claim 4
Dependent Claim 146 words
Structure for holding an etchant for use in etching semiconductor wafers comprising: an etchant tank for containing an etchant; a cooling coil located within said etchant tank, said cooling coil having an inlet and an outlet; a source of coolant gas connected to said inlet of said cooling coil; temperature detection means for providing a signal indicative of the temperature of said etchant; a vent connected to said outlet; and control means responsive to said signal from said temperature detection means for controlling the flow of said coolant gas through said cooling coil; whereby said flow of said coolant gas through said cooling coil serves to remove heat generated in the reaction between said etchant and the material being etched thereby to ensure that said etchant is maintained at a temperature sufficiently low to prevent masking material on one surface of said wafers from being removed.
Claim 5
Dependent Claim 66 words
Structure as in claim 1 wherein said source of coolant gas is liquified coolant which is injected into said inlet of said cooling jacket, whereby the evaporation of said liquified coolant takes place within said cooling jacket, and said evaporation and the heating of said coolant gas within said cooling jacket removes heat generated in the exothermic reaction between said etchant and the material being etched.
Claim 6
Dependent Claim 66 words
Structure as in claim 2 wherein said source of coolant gas is liquified coolant which is injected into said inlet of said cooling coil, whereby the evaporation of said liquified coolant takes place within said cooling coil, and said evaporation and the heating of said coolant gas within said cooling coil removes heat generated in the exothermic reaction between said etchant and the material being etched.
Claim 7
Dependent Claim 22 words
Structure as in claims 1, 2, 3 or 4 wherein said tank contains an etchant comprised of acetic, nitric, and hydrofluoric acids.
Claim 8
Dependent Claim 16 words
Structure as in claims 1, 2, 3, or 4 wherein said source of coolant is nitrogen.
Claim 9
Dependent Claim 13 words
Structure as in claim 6 wherein said source of nitrogen is liquid nitrogen.
Claim 10
Dependent Claim 24 words
Structure as in claims 1, 2, 3 or 4 wherein said control means is connected between said source of coolant gas and said inlet.
Claim 11
Dependent Claim 21 words
Structure as in claims 1, 2, 3 or 4 wherein said control means is connected between said outlet and said vent.
Claim 12
Dependent Claim 17 words
Structure as in claims 1, 2, 3 or 4 wherein said control means is a solenoid valve.
Claim 13
Dependent Claim 22 words
Structure as in claim 5 wherein said control means operates to maintain the temperature of said etchant less than approximately 20° C.
Claim 14
Dependent Claim 25 words
Structure as in claim 11 wherein said control means operates to maintain the temperature of said etchant within the range of approximately 0° C.-20° C.
Claim 15
Dependent Claim 16 words
Structure as in claims 2 or 4 wherein said cooling coil is constructed of stainless steel.
Claim 16
Dependent Claim 15 words
Structure as in claims 2 or 4 wherein said cooling coil is constructed of titanium.
Claim 17
Dependent Claim 27 words
Structure as in claims 2 or 4 wherein said cooling coil is constructed of a plastic material substantially impervious to chemical or physical attack by said etchant.
Claim 18
Dependent Claim 27 words
Structure as in claims 2 or 4 wherein said cooling coil is coated with a plastic material substantially impervious to chemical or physical attack by said etchant.
Claim 19
Dependent Claim 57 words
Structure as in claim 16 wherein said inlet of said cooling coil is connected to said cooling coil below the top surface of said etchant, and said plastic material is insulated from said coolant gas by an insulating means, thereby preventing said plastic material from reaching the extremely low temperature of said coolant gas at said inlet.
Claim 20
Dependent Claim 26 words
Structure as in claims 1, 2, 3, or 4 wherein said tank contains an etchant and gas is bubbled through said etchant, thereby agitating said etchant.
Claim 21
Dependent Claim 12 words
Structure as in claim 18 wherein said gas is said coolant gas.

References Cited (Backward Citations)

US3127755A Cited
US3959982A Cited
US4251317A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-01-24 1986-07-26 1987-01-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-01-24 1990-07-26 1991-01-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-01-24 1994-07-26 1995-01-25 $7700.00 Window Closed / Lapsed

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