US4935805A
Expired / Lapsed
US
⏱️ 0.0 years remaining
T-type undercut electrical contact on a semiconductor substrate
Assignee: Eaton Corp
•
Filing: 1989-04-03
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Granted: 1990-06-19
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Expires: 2009-04-03
Abstract
Abstract On a semiconductor substrate (14, 38) T-type undercut electrical contact structure (12, 36) and methodology provides a diffusion barrier (26, 40) preventing migration therethrough from a gold layer (30, 48) along the sides of an undercut schottky metal lower layer (28, 44) into the active region of the semiconductor substrate. In one embodiment, the diffusion barrier (26) is provided at the base of the gold layer (30). In another embodiment, the gold layer (48) is encapsulated by the diffusion barrier (40) on the bottom (46) and sides (56). The diffusion barrier base layer is deposited. The diffusion barrier side layers are electroplated.
Inventors
- 👤 Joseph A. Calviello
- 👤 Paul R. Bie
- 👤 David Ward
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
170 words
A T-type undercut electrical contact structure on a semiconductor substrate, with said contact structure encapsulated on the bottom and sides by a diffusion barrier, comprising: a first metal layer on said substrate, said first metal layer being oxidizable; a second metal layer on said first metal layer; a third metal layer on said second metal layer, said third metal layer being non-oxidizable, said second metal layer being a material providing a diffusion barrier against migration therethrough from said third metal layer; wherein portions of said third metal layer outside of a given contact area are removed, portions of said second metal layer outside said contact area are removed, portions of said first metal layer outside said contact area are removed, and portions of said first metal layer within said contact area undercut beneath said second and third layers are removed; side metal layers on the sides of said third metal layer, said side metal layers being a material providing a diffusion barrier against migration therethrough from said third metal layer.
Claim 2
Dependent Claim
170 words
A T-type undercut electrical contact structure on a semiconductor substrate, with said contact structure encapsulated on the bottom and sides by a diffusion barrier, comprising: a first metal layer on said substrate, said first metal layer being oxidizable; a second metal layer on said first metal layer; a third metal layer on said second metal layer, said third metal layer being non-oxidizable, said second metal layer being a material providing a diffusion barrier against migration therethrough from said third metal layer; wherein portions of said third metal layer outside of a given contact area are removed, portions of said second metal layer outside said contact area are removed, portions of said first metal layer outside said contact area are removed, and portions of said first metal layer within said contact area undercut beneath said second and third layers are removed; side metal layers on the sides of said third metal layer, said side metal layers being a material providing a diffusion barrier against migration therethrough from said third metal layer.
Claim 3
Dependent Claim
35 words
The invention according to claim 1 wherein said second metal layer is non-oxidizable, and wherein said side metal layers are on the sides of said second and third metal layers above said first metal layer.
Claim 4
Dependent Claim
21 words
The invention according to claim 1 wherein said second metal layer and said side metal layers are of the same material.
Claim 5
Dependent Claim
26 words
The invention according to claim 3 wherein said first and second layers are of different materials and subject to etching by first and second different etchants.
Claim 6
Dependent Claim
31 words
The invention according to claim 4 wherein said third layer is of a further different material than said first and second layers and is subject to etching by said second etchant.
Claim 7
Dependent Claim
27 words
The invention according to claim 1 wherein said first layer is tantalum, said second layer and said side layers are platinum, and said third layer is gold.
Claim 8
Dependent Claim
18 words
The invention according to claim 6 further comprising a titanium sublayer on said substrate beneath said first layer.
References Cited (Backward Citations)
US3923975A
Cited
US3886580A
Cited
US4075650A
Cited
US4098921A
Cited
US4179533A
Cited
US4312113A
Cited
US4312112A
Cited
US4310570A
Cited
US4301233A
Cited
JPS5835919A
Cited
JPS5846631A
Cited
US4549194A
Cited
JPS59117172A
Cited
US4574298A
Cited
US4601096A
Cited
US4650543A
Cited
US4674174A
Cited
US4674177A
Cited
US4631560A
Cited
US4630081A
Cited
US4665413A
Cited
US4620207A
Cited
US4683642A
Cited
US4692997A
Cited
US4701996A
Cited
US4724220A
Cited
US4624004A
Cited
US4735913A
Cited
US4789645A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-18 | 1993-12-18 | 1994-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-18 | 1997-12-18 | 1998-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-18 | 2001-12-18 | 2002-06-19 | $7700.00 | Window Closed / Lapsed |