US4312113A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making field-effect transistors with micron and submicron gate lengths
Assignee: Eaton Corp
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Filing: 1979-11-29
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Granted: 1982-01-26
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Expires: 1999-11-29
Abstract
Abstract Field-effect transistors using Schottky junctions formed of tantalum on N-doped gallium arsenide with tantalum oxide and native oxide passivations.
Inventors
- 👤 Joseph A. Calviello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/87; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D64/649; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
159 words
A process for fabricating a metal-oxide semiconductor junction comprising the steps of: (a) providing an N-type semiconductor semi-insulating substrate with an N-layer having a carrier concentration in the range of 1×10 16 to 4×10 18 atoms per cubic centimeter, (b) depositing a layer of tantalum on the N-layer, (c) depositing a layer of gold on the tantalum layer, (d) defining the source and drain area by photolithographic means, (e) removing the gold in areas not defined as the source and drain junction areas, (f) reducing the thickness of the tantalum layer outside the source and drain junction areas, (g) oxidizing the total exposed tantalum layer completely, (h) depositing a layer of photo resist, (i) defining the gate area by photolithographic means, (j) removing the photo resist in the gate area, (k) depositing a layer of gold, and (l) removing the photo resist and the gold away from the gate, leaving only a layer of gold over the gate area.
Claim 2
Dependent Claim
159 words
A process for fabricating a metal-oxide semiconductor junction comprising the steps of: (a) providing an N-type semiconductor semi-insulating substrate with an N-layer having a carrier concentration in the range of 1×10 16 to 4×10 18 atoms per cubic centimeter, (b) depositing a layer of tantalum on the N-layer, (c) depositing a layer of gold on the tantalum layer, (d) defining the source and drain area by photolithographic means, (e) removing the gold in areas not defined as the source and drain junction areas, (f) reducing the thickness of the tantalum layer outside the source and drain junction areas, (g) oxidizing the total exposed tantalum layer completely, (h) depositing a layer of photo resist, (i) defining the gate area by photolithographic means, (j) removing the photo resist in the gate area, (k) depositing a layer of gold, and (l) removing the photo resist and the gold away from the gate, leaving only a layer of gold over the gate area.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-01-25 | 1985-07-27 | 1986-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-01-25 | 1989-07-27 | 1990-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-01-25 | 1993-07-27 | 1994-01-26 | $7700.00 | Window Closed / Lapsed |