Patent US4926230A successfully refreshed from Google Patents.
US4926230A
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Multiple junction solar power generation cells
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1989-07-10
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Granted: 1990-05-15
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Expires: 2009-07-10
Abstract
Abstract A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.
Inventors
- 👤 Hideo Yamagishi
- 👤 Minori Yamaguchi
- 👤 Keizo Asaoka
- 👤 Akihiko Hiroe
- 👤 Masataka Kondo
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:10
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
146 words
A semiconductor device substantially consisting of amorphous material, having a multijunction structure comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having a first surface of one conductivity type adjacent said first electrode and a second surface; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to from a second P-I-N photovoltaic element having a first surface of an opposite conductivity type and a second surface; a semiconductor high impurity layer, having a higher impurity doping than either of said first and second p-I-N photovoltaic elements, said high impurity layer being disposed between said second surface of said first P-I-N element and said first surface of said second P-I-N element; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 2
Dependent Claim
146 words
A semiconductor device substantially consisting of amorphous material, having a multijunction structure comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having a first surface of one conductivity type adjacent said first electrode and a second surface; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to from a second P-I-N photovoltaic element having a first surface of an opposite conductivity type and a second surface; a semiconductor high impurity layer, having a higher impurity doping than either of said first and second p-I-N photovoltaic elements, said high impurity layer being disposed between said second surface of said first P-I-N element and said first surface of said second P-I-N element; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 3
Dependent Claim
19 words
The semiconductor device of claim 1 wherein said high impurity layer is disposed on said second p-i-n photovoltaic element.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 2, wherein said high impurity layer has a thickness within the range of 10-300 Å.
Claim 5
Dependent Claim
20 words
The semiconductor device of claim 2, wherein said high impurity layer is doped with dopants consisting essentially of p-type dopants.
Claim 6
Dependent Claim
19 words
The semiconductor device of claim 1 wherein said high impurity layer is disposed on said first p-i-n photovoltaic element.
Claim 7
Dependent Claim
20 words
The semiconductor device of claim 5, wherein said high impurity layer is doped with dopants consisting essentially of n-type dopants.
Claim 8
Dependent Claim
20 words
The semiconductor device of claim 5, wherein said high impurity layer has a thickness within the range of 10-700 Å.
Claim 9
Dependent Claim
16 words
The semiconductor device of claim 1, wherein said high impurity layer comprises at least two layers.
Claim 10
Dependent Claim
164 words
A photovoltaic device comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of a first conductivity type and a second surface, said first surface being adjacent to said first electrode; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a second P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of an opposite conductivity type and a second surface; a semiconductor boundary layer disposed between said first P-I-N photovoltaic element and said second P-I-N element, said boundary layer having an impurity concentration higher than the impurity concentration of either of said first and second P-I-N photovoltaic elements, said impurities being selected from the group consisting of nitrogen, oxygen, iron, copper and germanium; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 11
Dependent Claim
164 words
A photovoltaic device comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of a first conductivity type and a second surface, said first surface being adjacent to said first electrode; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a second P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of an opposite conductivity type and a second surface; a semiconductor boundary layer disposed between said first P-I-N photovoltaic element and said second P-I-N element, said boundary layer having an impurity concentration higher than the impurity concentration of either of said first and second P-I-N photovoltaic elements, said impurities being selected from the group consisting of nitrogen, oxygen, iron, copper and germanium; and a second electrode adjacent said second surface of said second P-I-N element.
References Cited (Backward Citations)
US4171235A
Cited
US4492810A
Cited
US4249957A
Cited
US4332974A
Cited
US4255211A
Cited
US4377723A
Cited
US4460670A
Cited
US4404421A
Cited
JPS58163954A
Cited
US4737196A
Cited
US4742012A
Cited
US4721535A
Cited
US4703553A
Cited
US4776894A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-05-14 | 1993-11-13 | 1994-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-14 | 1997-11-13 | 1998-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-14 | 2001-11-13 | 2002-05-15 | $7700.00 | Window Closed / Lapsed |