US4721535A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solar cell
Assignee: DIRECTOR-GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 1-3-1 KASUMIGASEKI CHIYODA-KU TOKYO
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Filing: 1986-08-04
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Granted: 1988-01-26
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Expires: 2006-08-04
Abstract
Abstract A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 Å and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.
Inventors
- 👤 Haruo Itoh
- 👤 Toshikazu Shimada
- 👤 Shin-ichi Muramatsu
- 👤 Sunao Matsubara
- 👤 Nobuo Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:56
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548; Y10; Y10S; Y10S148/00; Y10S148/16
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
105 words
A solar cell comprising at least a thin film having p-type conductivity, wherein said thin film is realized in a multi-layer structure including at least one non-doped layer formed of amorphous silicon carbide or nitride and having a thickness of 10 to 300 Å and at least one p-type doped amorphous silicon carbide or nitride layer of a given thickness, said p-type doped amorphous silicon carbide or nitride layer being stacked such that at least one face thereof is brought into contact with said non-doped layer or amorphous silicon carbide or nitride so that said thin film of multi-layer structure exhibits, in effect, p-type conductivity.
Claim 2
Dependent Claim
105 words
A solar cell comprising at least a thin film having p-type conductivity, wherein said thin film is realized in a multi-layer structure including at least one non-doped layer formed of amorphous silicon carbide or nitride and having a thickness of 10 to 300 Å and at least one p-type doped amorphous silicon carbide or nitride layer of a given thickness, said p-type doped amorphous silicon carbide or nitride layer being stacked such that at least one face thereof is brought into contact with said non-doped layer or amorphous silicon carbide or nitride so that said thin film of multi-layer structure exhibits, in effect, p-type conductivity.
References Cited (Backward Citations)
US4492810A
Cited
US4598164A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-25 | 1991-07-27 | 1992-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-25 | 1995-07-27 | 1996-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-25 | 1999-07-27 | 2000-01-26 | $7700.00 | Window Closed / Lapsed |