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US4255211A Expired / Lapsed US ⏱️ 0.0 years remaining

Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface

Assignee: Chevron USA Inc
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Filing: 1979-12-31
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Granted: 1981-03-10
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Expires: 1999-12-31
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Abstract

Abstract A new high efficiency, multijunction photovoltaic solar cell for use with a concentration lens. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor materials, each layer containing within it a light sensitive p/n junction of a similar polarity, each layer having essentially the same lattice constant as the single crystal substrate, each layer having a shorting junction contact with the layer immediately above and below it, each successive layer adsorbing light energy at a shorter wavelength, and each layer being of sufficient thickness and appropriate composition to develop essentially the same current as the other layers. At the junction, between the successive layers of the multilayer cell, a thin pseudo transparent low bandgap semiconductor layer is provided at the shorting junction interface. The outer surfaces of the top layer and the substrate are provided with electrical contacts for distribution of the electric current. The top contact comprises a layer of a transparent conductive material with electrical connections and the whole structure is completed with an antireflection coating over the top.

Inventors

  • 👤 Lewis M. Fraas

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 06:50
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/544; Y02E10/547

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 144 words
A high efficiency, multi-junction photovoltaic solar cell for use with a light concentrating element, comprising a single crystal substrate without an internal light sensitive junction, two or more successive homogeneous layers of different semiconductor material deposited on said substrate, each layer containing within it a light sensitive p/n junction of a similar polarity, said p/n junction being a homojunction, each layer having essentially the same lattice constant as said single crystal substrate, each layer having a tunneling, shorting junction contact with the layer immediately above the below it, said shorting junction being a tunneling heterojunction, a thin substantially transparent low bandgap semiconductor layer at the inerface of said shorting junction, each layer being of sufficient thickness and appropriate composition to develop essentially the same zero voltage light generated current as the other layers, and each successive layer absorbing light energy at a different wavelength.
Claim 2
Dependent Claim 144 words
A high efficiency, multi-junction photovoltaic solar cell for use with a light concentrating element, comprising a single crystal substrate without an internal light sensitive junction, two or more successive homogeneous layers of different semiconductor material deposited on said substrate, each layer containing within it a light sensitive p/n junction of a similar polarity, said p/n junction being a homojunction, each layer having essentially the same lattice constant as said single crystal substrate, each layer having a tunneling, shorting junction contact with the layer immediately above the below it, said shorting junction being a tunneling heterojunction, a thin substantially transparent low bandgap semiconductor layer at the inerface of said shorting junction, each layer being of sufficient thickness and appropriate composition to develop essentially the same zero voltage light generated current as the other layers, and each successive layer absorbing light energy at a different wavelength.
Claim 3
Dependent Claim 20 words
The photovoltaic solar cell of claim 1 wherein the semiconductor layer at the interface of said shorting junction is germanium.
Claim 4
Dependent Claim 19 words
The photovoltaic solar cell of claim 2 wherein the germanium layer is between 50 and 300 A in thickness.
Claim 5
Dependent Claim 17 words
The photovoltaic solar cell of claim 2 wherein the germanium layer is approximately 100 A in thickness.
Claim 6
Dependent Claim 63 words
The photovoltaic solar cell of claim 1 wherein the shorting junction consists of: (a) a heavily doped first layer of Ga 1-x In x As of first conductivity type; (b) a heavily doped second layer of In 1-y Ga y P of opposite conductivity type, and (c) a heavily doped semiconductor layer of germanium at the interface of said first and second layers.
Claim 7
Dependent Claim 36 words
The photovoltaic solar cell of claim 5 wherein the first layer is about 500 A thick, and the second layer is about 1000 A thick, and the germanium layer is between 50 and 300 A thick.
Claim 8
Dependent Claim 59 words
The photovoltaic solar cell of claim 1 wherein: (a) the substrate is germanium, (b) there are two successive homogeneous layers, (i) the first of said layers is Ga 1-x In x A s (ii) the second of said layers is In 1-y Ga y P (c) and the semiconductor layer at the interface of said shorting junction is germanium.
Claim 9
Dependent Claim 17 words
The photovoltaic solar cell of claim 6 wherein: (a) x equals 0.12 and (b) y equals 0.43.

References Cited (Backward Citations)

US2919299A Cited
US3015762A Cited
US3186873A Cited
US3046459A Cited
US4015280A Cited
US4017332A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-03-09 1984-09-08 1985-03-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-03-09 1988-09-08 1989-03-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-03-09 1992-09-08 1993-03-10 $7700.00 Window Closed / Lapsed

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