US3186873A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Energy converter
Assignee: Bendix Corp
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Filing: 1959-09-21
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Granted: 1965-06-01
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Expires: 1979-09-21
Abstract
No abstract record available.
Inventors
- 👤 Jr William Crawford Dunlap
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:56
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
141 words
AN ENERGY CONVERTER COMPRISING A STACK OF ALTERNATELY ARRANGED LAYERS OF P AND N TYPE SEMICONDUCTOR MATERIAL, JUNCTIONS BEING FORMED BETWEEN EACH OF SAID P LAYERS AND THE NEAREST N LAYERS ON EITHER SIDE OF THE P LAYERS, THERE BEING AT LEAST TWO OF SAID JUNCTIONS IN SAID STACK, THE ENERGY BANDS OF SAID LAYERS BEING OF PROGRESSIVELY DECREASING VALUES, LOW RECOMBINATION RATE MATERIALS BEING IN THE SEMICONDUCTOR MATERIALS ON EITHER SIDE OF ALTERNATE JUNCTIONS TO GIVE LONG DIFFUSION LENGTHS TO THE CARRIERS MOVING ACROSS THE ALTERNATE JUNCTIONS, HIGH RECOMBINATION RATE MATERIALS BEING IN THE SEMICONDUCTOR MATERIALS ON EITHER SIDE OF THE REMAINING JUNCTIONS TO KEEP DIFFUSION LENGTHS OF CARRIERS MOVING ACROSS THE REMAINING JUNCTIONS TO A MINIMUM SO THAT, THE VOLTAGES ESTABLISHED ACROSS SAID ALTERNATE JUNCTIONS ARE ADDITIVE AND HAVE MINIMUM OPPOSITION FROM THE VOLTAGES ESTABLISHED ACROSS SAID REMAINING JUNCTIONS.
Claim 2
Dependent Claim
141 words
AN ENERGY CONVERTER COMPRISING A STACK OF ALTERNATELY ARRANGED LAYERS OF P AND N TYPE SEMICONDUCTOR MATERIAL, JUNCTIONS BEING FORMED BETWEEN EACH OF SAID P LAYERS AND THE NEAREST N LAYERS ON EITHER SIDE OF THE P LAYERS, THERE BEING AT LEAST TWO OF SAID JUNCTIONS IN SAID STACK, THE ENERGY BANDS OF SAID LAYERS BEING OF PROGRESSIVELY DECREASING VALUES, LOW RECOMBINATION RATE MATERIALS BEING IN THE SEMICONDUCTOR MATERIALS ON EITHER SIDE OF ALTERNATE JUNCTIONS TO GIVE LONG DIFFUSION LENGTHS TO THE CARRIERS MOVING ACROSS THE ALTERNATE JUNCTIONS, HIGH RECOMBINATION RATE MATERIALS BEING IN THE SEMICONDUCTOR MATERIALS ON EITHER SIDE OF THE REMAINING JUNCTIONS TO KEEP DIFFUSION LENGTHS OF CARRIERS MOVING ACROSS THE REMAINING JUNCTIONS TO A MINIMUM SO THAT, THE VOLTAGES ESTABLISHED ACROSS SAID ALTERNATE JUNCTIONS ARE ADDITIVE AND HAVE MINIMUM OPPOSITION FROM THE VOLTAGES ESTABLISHED ACROSS SAID REMAINING JUNCTIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-05-31 | 1968-11-30 | 1969-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-05-31 | 1972-11-30 | 1973-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-05-31 | 1976-11-30 | 1977-06-01 | $7700.00 | Window Closed / Lapsed |