Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
268 words
A high efficiency, multijunction photovoltaic solar cell for use with a light concentrating element comprising: (a) a single crystal, single element substrate without an internal light sensitive junction, said substrate capable of lattice matching to within ±1% to a Ga 0 .88 In 0 .12 As semiconductor material responsive in the sun light range, (b) a first homogeneous layer of semiconductor material deposited on said substrate, lattice matched thereto and having about Ga 0 .88 In 0 .12 As composition with a semiconductor bandgap of 1.25 ev., and absorbing sun light energy at a first wavelength, (c) a second homogeneous layer of semiconductor material deposited on said first layer lattice matched to said first homogeneous layer and having about Ga 0 .69 In 0 .31 As 0 .5 P 0 .5 composition with a semiconductor bandgap of 1.5 ev., and absorbing sun light energy at a second wavelength, (d) a third homogeneous layer of semiconductor material deposited on said second layer lattice matched to said second homogeneous layer and having about In 0 .5 Ga 0 .5 P composition with a semiconductor bandgap of 1.85 ev., and absorbing visible light energy at a third wavelength, (e) said first, second and third layer each having essentially the same lattice constant as said single crystal substrate to within ±1%, (f) said first, second and third layer each containing a light sensitive p/n homojunction and each layer having a tunneling, shorting heterojunction with the layer immediately above and below it, (g) said first, second and third layers each developing essentially the same zero voltage light generated current as the other layers.
Claim 2
Dependent Claim
268 words
A high efficiency, multijunction photovoltaic solar cell for use with a light concentrating element comprising: (a) a single crystal, single element substrate without an internal light sensitive junction, said substrate capable of lattice matching to within ±1% to a Ga 0 .88 In 0 .12 As semiconductor material responsive in the sun light range, (b) a first homogeneous layer of semiconductor material deposited on said substrate, lattice matched thereto and having about Ga 0 .88 In 0 .12 As composition with a semiconductor bandgap of 1.25 ev., and absorbing sun light energy at a first wavelength, (c) a second homogeneous layer of semiconductor material deposited on said first layer lattice matched to said first homogeneous layer and having about Ga 0 .69 In 0 .31 As 0 .5 P 0 .5 composition with a semiconductor bandgap of 1.5 ev., and absorbing sun light energy at a second wavelength, (d) a third homogeneous layer of semiconductor material deposited on said second layer lattice matched to said second homogeneous layer and having about In 0 .5 Ga 0 .5 P composition with a semiconductor bandgap of 1.85 ev., and absorbing visible light energy at a third wavelength, (e) said first, second and third layer each having essentially the same lattice constant as said single crystal substrate to within ±1%, (f) said first, second and third layer each containing a light sensitive p/n homojunction and each layer having a tunneling, shorting heterojunction with the layer immediately above and below it, (g) said first, second and third layers each developing essentially the same zero voltage light generated current as the other layers.
Claim 3
Dependent Claim
13 words
The photovoltaic solar cell of claim 1 wherein said substrate layer is germanium.
Claim 4
Dependent Claim
26 words
The photovoltaic solar cell of claim 1 with the addition of an outer surface layer of indium tin oxide deposited on the last deposited semiconductor layer.
Claim 5
Dependent Claim
19 words
The photovoltaic solar cell of claim 3 wherein said outer surface layer is between 0.2 and 2.0 micrometers thick.
Claim 6
Dependent Claim
17 words
The photovoltaic solar cell of claim 4 wherein said outer surface layer is about 1 micrometer thick.
Claim 7
Dependent Claim
18 words
The photovoltaic solar cell of claim 1 wherein the substrate layer is between 200 and 300 micrometers thick.
Claim 8
Dependent Claim
16 words
The photovoltaic solar cell of claim 6 wherein the substrate layer is about 250 micrometers thick.
Claim 9
Dependent Claim
21 words
The photovoltaic solar cell of claim 1 wherein each of said deposited semiconductor layers is between 2 and 6 micrometers thick.
Claim 10
Dependent Claim
19 words
The photovoltaic solar cell of claim 8 wherein each of said deposited semiconductor layers is about 4 micrometers thick.
Claim 11
Dependent Claim
20 words
The photovoltaic solar cell of claim 1 wherein the lattice constant maximum variation from 5.66 Angstroms between layers is ±1.0%.