US4926230A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multiple junction solar power generation cells
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1989-07-10
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Granted: 1990-05-15
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Expires: 2009-07-10
Abstract
Abstract A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.
Inventors
- 👤 Hideo Yamagishi
- 👤 Minori Yamaguchi
- 👤 Keizo Asaoka
- 👤 Akihiko Hiroe
- 👤 Masataka Kondo
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:45
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
146 words
A semiconductor device substantially consisting of amorphous material, having a multijunction structure comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having a first surface of one conductivity type adjacent said first electrode and a second surface; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to from a second P-I-N photovoltaic element having a first surface of an opposite conductivity type and a second surface; a semiconductor high impurity layer, having a higher impurity doping than either of said first and second p-I-N photovoltaic elements, said high impurity layer being disposed between said second surface of said first P-I-N element and said first surface of said second P-I-N element; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 2
Dependent Claim
146 words
A semiconductor device substantially consisting of amorphous material, having a multijunction structure comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having a first surface of one conductivity type adjacent said first electrode and a second surface; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to from a second P-I-N photovoltaic element having a first surface of an opposite conductivity type and a second surface; a semiconductor high impurity layer, having a higher impurity doping than either of said first and second p-I-N photovoltaic elements, said high impurity layer being disposed between said second surface of said first P-I-N element and said first surface of said second P-I-N element; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 3
Dependent Claim
19 words
The semiconductor device of claim 1 wherein said high impurity layer is disposed on said second p-i-n photovoltaic element.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 2, wherein said high impurity layer has a thickness within the range of 10-300 Å.
Claim 5
Dependent Claim
20 words
The semiconductor device of claim 2, wherein said high impurity layer is doped with dopants consisting essentially of p-type dopants.
Claim 6
Dependent Claim
19 words
The semiconductor device of claim 1 wherein said high impurity layer is disposed on said first p-i-n photovoltaic element.
Claim 7
Dependent Claim
20 words
The semiconductor device of claim 5, wherein said high impurity layer is doped with dopants consisting essentially of n-type dopants.
Claim 8
Dependent Claim
20 words
The semiconductor device of claim 5, wherein said high impurity layer has a thickness within the range of 10-700 Å.
Claim 9
Dependent Claim
16 words
The semiconductor device of claim 1, wherein said high impurity layer comprises at least two layers.
Claim 10
Dependent Claim
164 words
A photovoltaic device comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of a first conductivity type and a second surface, said first surface being adjacent to said first electrode; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a second P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of an opposite conductivity type and a second surface; a semiconductor boundary layer disposed between said first P-I-N photovoltaic element and said second P-I-N element, said boundary layer having an impurity concentration higher than the impurity concentration of either of said first and second P-I-N photovoltaic elements, said impurities being selected from the group consisting of nitrogen, oxygen, iron, copper and germanium; and a second electrode adjacent said second surface of said second P-I-N element.
Claim 11
Dependent Claim
164 words
A photovoltaic device comprising: a first electrode; a first layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a first P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of a first conductivity type and a second surface, said first surface being adjacent to said first electrode; a second layer comprised of a plurality of layers that are P-type, intrinsic, and N-type to form a second P-I-N photovoltaic element having an amorphous crystalline structure and having a first surface of an opposite conductivity type and a second surface; a semiconductor boundary layer disposed between said first P-I-N photovoltaic element and said second P-I-N element, said boundary layer having an impurity concentration higher than the impurity concentration of either of said first and second P-I-N photovoltaic elements, said impurities being selected from the group consisting of nitrogen, oxygen, iron, copper and germanium; and a second electrode adjacent said second surface of said second P-I-N element.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-14 | 1993-11-13 | 1994-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-14 | 1997-11-13 | 1998-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-14 | 2001-11-13 | 2002-05-15 | $7700.00 | Window Closed / Lapsed |