Abstract An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by providing an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.
In a low pressure chemical vapor deposition reactor having a vacuum housing and a mixing chamber, a method of depositing tungsten silicide on a substrate or a plurality of substrates comprising the steps of: evacuating said vacuum housing; providing a flow of silane and tungsten hexafluoride into the mixing chamber, the flow rate of silane being greater than 20 times the flow rate of tungsten hexafluoride, said mixing chamber connected to said vacuum housing for introducing silane and tungsten hexafluoride as mixed gases into said vacuum housing; heating said substrate or plurality of substrates to cause deposition of tungsten silicide on said substrate or plurality of substrates; and actively cooling the vacuum housing to a temperature of below 60° C. to decrease the deposition of tungsten silicate on said housing.
Claim 2
Dependent Claim
130 words
In a low pressure chemical vapor deposition reactor having a vacuum housing and a mixing chamber, a method of depositing tungsten silicide on a substrate or a plurality of substrates comprising the steps of: evacuating said vacuum housing; providing a flow of silane and tungsten hexafluoride into the mixing chamber, the flow rate of silane being greater than 20 times the flow rate of tungsten hexafluoride, said mixing chamber connected to said vacuum housing for introducing silane and tungsten hexafluoride as mixed gases into said vacuum housing; heating said substrate or plurality of substrates to cause deposition of tungsten silicide on said substrate or plurality of substrates; and actively cooling the vacuum housing to a temperature of below 60° C. to decrease the deposition of tungsten silicate on said housing.