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US3645230A Expired / Lapsed US ⏱️ 0.0 years remaining

Chemical deposition apparatus

Assignee: Hugle Ind Inc
•
Filing: 1970-03-05
•
Granted: 1972-02-29
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Expires: 1990-03-05
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Abstract

Abstract A vertical flow-type deposition apparatus, typically for growing semiconductor layers, including epitaxial layers, upon a large plurality of substrates at one time. These are carried, vertically disposed, upon the outside of a rotatable barrellike susceptor, while an induction heating coil is within the susceptor. Vapors or gases for processing are admitted at the bottom of a water-cooled enclosure and are exhausted at the top. The coil is separated from the processing volume by a refractory shield.

Inventors

  • 👤 William B Hugle
  • 👤 Donald G Pedrotti
  • 👤 William F Perrine

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 08:38
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/76; H10P72/7604; H10P72/7621; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4587; C23C16/4588

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 174 words
A chemical deposition apparatus comprising; a. an upstanding dual-walled enclosure (5,7), b. a baffle (13) between the dual walls of said enclosure to direct cooling fluid circuitously upward between said walls, c. a single essentially cylindrical susceptor (12) having a vertically disposed axis, and carrying a large plurality of substrates (20) to be processed, essentially vertically disposed upon the exterior of said susceptor, d. annular magnetic means (15, 16) revolvably carrying said susceptor and disposed within the volume (10) of said enclosure (5,7), e. rotatable ring means (18) carrying plural circumferentially spaced magnets (17) disposed adjacent to and in magnetic relation to said magnetic means, outside of the volume of said enclosure, f. plural vertical inlet apertures (2) spaced one from the other only at the bottom of said enclosure, said apertures being relatively concentric with said cylindrical susceptor, and g. a single exit aperture at the top of said enclosure relatively concentric with said cylindrical susceptor, whereby gaseous reactants admitted at said plural inlet apertures flow upwardly past each of the rotating substrates.
Claim 2
Dependent Claim 174 words
A chemical deposition apparatus comprising; a. an upstanding dual-walled enclosure (5,7), b. a baffle (13) between the dual walls of said enclosure to direct cooling fluid circuitously upward between said walls, c. a single essentially cylindrical susceptor (12) having a vertically disposed axis, and carrying a large plurality of substrates (20) to be processed, essentially vertically disposed upon the exterior of said susceptor, d. annular magnetic means (15, 16) revolvably carrying said susceptor and disposed within the volume (10) of said enclosure (5,7), e. rotatable ring means (18) carrying plural circumferentially spaced magnets (17) disposed adjacent to and in magnetic relation to said magnetic means, outside of the volume of said enclosure, f. plural vertical inlet apertures (2) spaced one from the other only at the bottom of said enclosure, said apertures being relatively concentric with said cylindrical susceptor, and g. a single exit aperture at the top of said enclosure relatively concentric with said cylindrical susceptor, whereby gaseous reactants admitted at said plural inlet apertures flow upwardly past each of the rotating substrates.
Claim 3
Dependent Claim 32 words
The apparatus of claim 1, which additionally includes; a. a refractory cylindrical support (27) interposed between said magnetic means (15) and said susceptor (12), to support said susceptor atop said magnetic means.
Claim 4
Dependent Claim 36 words
The apparatus of claim 1, in which; a. said susceptor has a large plurality of recesses (14) each inclined inwardly toward the top thereof approximately 2 1/2 * for carrying said substrates (20) upon said susceptor.
Claim 5
Dependent Claim 46 words
The apparatus of claim 1, which additionally includes; a. a heat exchanger (11) connected to said dual-walled enclosure (5,7) to maintain the temperature of said cooling fluid at a selected value suited to inhibit deposition of reactants upon the inner wall (7) of said dual-walled container.
Claim 6
Dependent Claim 24 words
The apparatus of claim 1, which additionally includes; a. a path (4) for cooling fluid within said baseplate (1) adjacent to said inlet apertures.

References Cited (Backward Citations)

US3039952A Cited
US3233578A Cited
US3395304A Cited
US3424629A Cited
US3508962A Cited
US3460510A Cited
US3408982A Cited
US3456616A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-02-28 1975-08-30 1976-02-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-02-28 1979-08-30 1980-02-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-02-28 1983-08-30 1984-02-29 $7700.00 Window Closed / Lapsed

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