Patent US4916513A successfully refreshed from Google Patents.
US4916513A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectrically isolated integrated circuit structure
Assignee: LI SECOND FAMILY LP
•
Filing: 1977-10-03
•
Granted: 1990-04-10
•
Expires: 1997-10-03
Abstract
Abstract An integrated circuit structure is made up of laterally spaced islands separated from each other by closed annular grooves of an electrically isolating matter which can be either ambient air or vacuum, or an oxide formed from the adjacent semiconductor material.
Inventors
- 👤 Chou H. Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:20
CPC Classifications
H; H10; H10F; H10F71/00; H10W; H10W10/00; H10W10/10; H10W10/17; C; C30; C30B; C30B21/00; C30B21/02; C30B21/04; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D62/117; H10D62/40; H10D99/00; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F10/19; H10F19/00; H10F19/50; H10F39/00; H10F39/10; H10F39/107; H10F77/00; H10F77/10; H10F77/16; H10F99/00; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10P; H10P95/00; H10P95/50; H10W10/01; H10W10/011; H10W10/021; H10W10/031; H10W10/041; H10W10/20; H10W10/30; H10W10/40; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
205 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; wherein the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and wherein the interface between the groove and the semiconductor material is a surface having a curvature in a vertical plane at the intersection thereof with the PN junction to thereby form a differentially expanded PN junction surface.
Claim 2
Dependent Claim
205 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; wherein the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and wherein the interface between the groove and the semiconductor material is a surface having a curvature in a vertical plane at the intersection thereof with the PN junction to thereby form a differentially expanded PN junction surface.
Claim 3
Dependent Claim
193 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and wherein each groove has a rounded underside across at least a major portion of the groove width and a bottom of substantially zero width.
Claim 4
Dependent Claim
193 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and wherein each groove has a rounded underside across at least a major portion of the groove width and a bottom of substantially zero width.
Claim 5
Dependent Claim
200 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and in which the interface between each groove and the semiconductor material has, at the PN junction, a radius of curvature which is in the range of one micron to one centimeter.
Claim 6
Dependent Claim
200 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by which each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and in which the interface between each groove and the semiconductor material has, at the PN junction, a radius of curvature which is in the range of one micron to one centimeter.
Claim 7
Dependent Claim
193 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by width each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and in which the electrically isolating oxide has a top surface which is substantially coplanar with the top surface of the islands of semiconductor material.
Claim 8
Dependent Claim
193 words
A semiconductor material structure comprising: a semiconductor material substrate of one conductivity type having an upwardly facing and laterally extending major surface; a semiconductor material layer of opposite conductivity type disposed on said major surface of the substrate and extending therealong; an isolating PN junction extending laterally along said structure and forming an isolation barrier between regions of said substrate and layer; and closed annular grooves of an electrically isolating matter which extend downwardly into the structure from the top surface of said layer, intersect the PN junction and divide a top portion of the structure into a plurality of islands which are laterally spaced from each other by the width of the grooves and are electrically isolated from each other by said grooves and said PN junction, each groove having a bottom which is within one micron of the PN junction; in which the distance by width each groove extends downwardly into the structure varies along at least a major portion of the width of the groove; and in which the electrically isolating oxide has a top surface which is substantially coplanar with the top surface of the islands of semiconductor material.
References Cited (Backward Citations)
US28653A
Cited
US3354360A
Cited
US3598664A
Cited
US3386865A
Cited
US3430109A
Cited
US3534234A
Cited
USRE28653E
Cited
US3586542A
Cited
US3648125A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |