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US4887274A
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Deterioration-resistant superlattice semiconductor laser device
Assignee: Sharp Corp
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Filing: 1987-12-14
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Granted: 1989-12-12
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Expires: 2007-12-14
Abstract
Abstract A Semiconductor laser device comprising a quantum well region with a superlattice structure that functions as an active region, wherein the superlattice quantum well region is composed of alternate layers consisting of a plurality of first Al x Ga 1-x As thin films and a plurality of second Al y Ga 1-y As thin films (0<x<y≦1).
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:12
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
76 words
In a semiconductor laser device comprising a substrate and a quantum well region with a superlattice structure that functions as an active region on said substrate, the improvement which comprises said superlattice quantum well region that is composed of alternate layers comprising a plurality of first Al x Ga 1-x As thin films and a plurality of second Al y Ga 1-y As thin films (0<x<y≦1, whereby deterioration of said superlattice quantum well region is suppressed.
Claim 2
Dependent Claim
76 words
In a semiconductor laser device comprising a substrate and a quantum well region with a superlattice structure that functions as an active region on said substrate, the improvement which comprises said superlattice quantum well region that is composed of alternate layers comprising a plurality of first Al x Ga 1-x As thin films and a plurality of second Al y Ga 1-y As thin films (0<x<y≦1, whereby deterioration of said superlattice quantum well region is suppressed.
Claim 3
Dependent Claim
42 words
A semiconductor laser device according to claim 1, wherein said quantum well region is sandwiched between GRIN layers, the AlAs mole fraction of said GRIN layers of each varying according to a parabolic distribution in the thickness direction of said GRIN layers.
Claim 4
Dependent Claim
38 words
A semiconductor laser device according to claim 1, wherein the AlAs mole fraction of said quantum well region repeatedly varies between a first fixed level and a second fixed level that is lower than said first fixed level.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-11 | 1993-06-12 | 1993-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-11 | 1997-06-12 | 1997-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-11 | 2001-06-12 | 2001-12-12 | $7700.00 | Window Closed / Lapsed |