US4631802A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of a semiconductor device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1985-03-25
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Granted: 1986-12-30
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Expires: 2005-03-25
Abstract
Abstract A semiconductor device composed of a transistor for modulation and a semiconductor laser as one body, in which on the uppermost layer of a semiconductor laser composed of a multilayer epitaxial wafer, there is provided a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer and having a V-shaped groove filled with a semiconductor zone of the same conductivity type as that of the uppermost layer, and ohmic electrodes are provided on the back surface of the substrate of the semiconductor laser, the semiconductor layer of different conductivity type and the semiconductor zone of the same conductivity type.
Inventors
- 👤 Hideki Hayashi
- 👤 Kenichi Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H10; H10H; H10H29/00; H10H29/10; H01S5/06; H01S5/062; H01S5/06203
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
144 words
A process for making a semiconductor device, which comprises a step of growing epitaxially on the uppermost layer of a multilayer epitaxial wafer for composing a semiconductor laser a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer, a step of etching the semiconductor layer only with anisotropic and selective etchant to give a cross section of V-type, a step of growing epitaxially another layer consisting of a semiconductor of different conductivity type from that of the semiconductor layer to form a flat surface, a step of etching the whole surface until the semiconductor layer is exposed except on the area of the V-type zone, and a step of forming ohmic electrodes on the semiconductor zone of V-type, the semiconductor layers positioned opposite each other across the semiconductor zone of V-type and the back surface of a substrate.
Claim 2
Dependent Claim
144 words
A process for making a semiconductor device, which comprises a step of growing epitaxially on the uppermost layer of a multilayer epitaxial wafer for composing a semiconductor laser a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer, a step of etching the semiconductor layer only with anisotropic and selective etchant to give a cross section of V-type, a step of growing epitaxially another layer consisting of a semiconductor of different conductivity type from that of the semiconductor layer to form a flat surface, a step of etching the whole surface until the semiconductor layer is exposed except on the area of the V-type zone, and a step of forming ohmic electrodes on the semiconductor zone of V-type, the semiconductor layers positioned opposite each other across the semiconductor zone of V-type and the back surface of a substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-29 | 1990-06-30 | 1990-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-29 | 1994-06-30 | 1994-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-29 | 1998-06-30 | 1998-12-30 | $7700.00 | Window Closed / Lapsed |