Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers

Claim 1

A composition comprising a mixture of a polyamic acid material of reduced acidity comprising a polyamic acid having the general formula ##STR7## wherein Q is C or C=O, R is a divalent aromatic or aliphatic radical having no active hydrogen, R 1 is a hydrogen or an alkyl group containing 1 to 3 carbon atoms, and R 2 and R 3 are independently selected from H, CH 3 , C n H 2n+1 where n is a positive integer, and CF 3 , m is an integer from 0 to 1 and p is a positive integer, which is reacted or blended to form (a) a polyamic acid material having a level of acidity which is reduced by from about 10 to about 40 percent of the original polyamic acid and (b) a diazoquinone photosensitizer, each of (a) and (b) being present in sufficient quantity to form a photoresist composition which after radiation exposure and development in alkaline solution, produces a resist image of fine line resolution.