Patent US4869931A successfully refreshed from Google Patents.
US4869931A
Expired / Lapsed
US
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Method for forming deposited films of group II-VI compounds
Assignee: Canon Inc
•
Filing: 1989-01-17
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Granted: 1989-09-26
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Expires: 2009-01-17
Abstract
Abstract A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.
Inventors
- 👤 Masaaki Hirooka
- 👤 Masahiro Kanai
- 👤 Jun-Ichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:39
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
152 words
A method for forming a deposited film comprising: introducing separately into a reaction space (a) a gaseous starting material containing an element of Group IIB of the periodic table for formation of a deposited film, (b) a gaseous starting material containing an element of Group VIA of the periodic table for formation of a deposited film, and (c) a gaseous halogenic oxidizing agent capable of oxidizing said starting materials and selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 , thereby forming a mixture and effecting contact therebetween to chemically form a plurality of precursors including precursors in an excited state, and forming a deposited film on a substrate in a film-forming space without the use of external discharge energy in the film-forming space and with at least one of said precursors as a field source for the constituent element of said deposited film.
Claim 2
Independent Claim
152 words
A method for forming a deposited film comprising: introducing separately into a reaction space (a) a gaseous starting material containing an element of Group IIB of the periodic table for formation of a deposited film, (b) a gaseous starting material containing an element of Group VIA of the periodic table for formation of a deposited film, and (c) a gaseous halogenic oxidizing agent capable of oxidizing said starting materials and selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 , thereby forming a mixture and effecting contact therebetween to chemically form a plurality of precursors including precursors in an excited state, and forming a deposited film on a substrate in a film-forming space without the use of external discharge energy in the film-forming space and with at least one of said precursors as a field source for the constituent element of said deposited film.
Claim 3
Dependent Claim
26 words
A method for forming a deposited film according to claim 1, wherein said element in Group IIB of the periodic table is Zn, Cd or Hg.
Claim 4
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein said element in Group VIA of the periodic table is O, S, Se or Te.
Claim 5
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent is fluorine gas.
Claim 6
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent is chlorine gas.
Claim 7
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent is a halogen under nascent state.
Claim 8
Dependent Claim
41 words
A method for forming a deposited film according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting materials and said gaseous halogenic oxidizing agent are introduced into said reaction space.
Claim 9
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting materials and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-25 | 1993-03-27 | 1993-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-25 | 1997-03-27 | 1997-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-25 | 2001-03-27 | 2001-09-26 | $7700.00 | Window Closed / Lapsed |