Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
214 words
A method for forming a semiconductor device including a wafer having a top surface and a bottom surface and one or more regions of a first type formed within said wafer adjacent said top surface which are electrically isolated from said bottom surface of said wafer and one or more regions of a second type formed within said wafer adjacent said top surface which are electrically connected to said bottom surface of said wafer, said regions of said first type being electrically isolated from each other and from said regions of said second type, said regions of said first and second type being laterally displaced from one another, said method comprising the steps of: forming a protective layer on the surface of a first substrate where said one or more regions of said first type are to be formed; forming grooves in said first substrate surrounding areas in said first substrate where said regions of said first and second types are to be formed; forming an insulating layer on the surface of said first substrate not covered by said protective layer and extending into said grooves; attaching a second substrate to said layer on said first substrate; and removing the bottom portion of said first substrate to expose said insulating layer within said grooves.
Claim 2
Independent Claim
214 words
A method for forming a semiconductor device including a wafer having a top surface and a bottom surface and one or more regions of a first type formed within said wafer adjacent said top surface which are electrically isolated from said bottom surface of said wafer and one or more regions of a second type formed within said wafer adjacent said top surface which are electrically connected to said bottom surface of said wafer, said regions of said first type being electrically isolated from each other and from said regions of said second type, said regions of said first and second type being laterally displaced from one another, said method comprising the steps of: forming a protective layer on the surface of a first substrate where said one or more regions of said first type are to be formed; forming grooves in said first substrate surrounding areas in said first substrate where said regions of said first and second types are to be formed; forming an insulating layer on the surface of said first substrate not covered by said protective layer and extending into said grooves; attaching a second substrate to said layer on said first substrate; and removing the bottom portion of said first substrate to expose said insulating layer within said grooves.
Claim 3
Dependent Claim
15 words
A method as in claim 1 wherein said protective layer comprises an oxidation blocking material.
Claim 4
Dependent Claim
13 words
A method as in claim 2 wherein said protective layer comprises silicon nitride.
Claim 5
Dependent Claim
17 words
A method as in claim 3 wherein said insulating layer comprises an oxide of said first substrate.
Claim 6
Dependent Claim
22 words
A method as in claim 1 which further comprises the step of removing said protective layer prior to said step of attaching.
Claim 7
Dependent Claim
17 words
A method as in claim 1 wherein said insulating layer comprises an oxide of said first substrate.
Claim 8
Dependent Claim
41 words
A method as in claim 1, wherein said insulating layer within said grooves comprises a first layer of dielectric material covering the sides of said groove and a second layer of conductive material formed on said first layer of dielectric material.
Claim 9
Dependent Claim
13 words
A method as in claim 7 wherein said conducive material comprises polycrystalline silicon.
Claim 10
Dependent Claim
20 words
A method as in claim 7 wherein said second layer is formed over the entire top surface of the wafer.
Claim 11
Dependent Claim
28 words
A method as in claim 7 which further comprises the step of removing, except within said grooves, said layer of conductive material prior to said step of attaching.
Claim 12
Dependent Claim
28 words
A method as in claim 8 which further comprises the step of: oxidizing the top surface of said layer of conductive material prior to attaching said second substrate.
Claim 13
Dependent Claim
35 words
A method as in claim 11 wherein said oxide formed on the top surface of said layer of conductive material is diffused into said first and second substrates during or following said step of attachment.