US4501060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectrically isolated semiconductor devices
Assignee: Nokia Bell Labs
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Filing: 1983-01-24
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Granted: 1985-02-26
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Expires: 2003-01-24
Abstract
Abstract Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.
Inventors
- 👤 Robert C. Frye
- 👤 Joseph E. Griffith
- 👤 Yiu H. Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 00:50
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/014; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
116 words
A process for producing a dielectrically isolated silicon region comprising the steps of (1) contacting a first and second body so that a silicon oxide and OH moieties are present at the interface between said first and second body and fusing said first and second bodies, wherein said fusion is accomplished by producing an electrical potential drop across said interface of less than 100 volts and subjecting said interface to a temperature of at least 1050 degrees C. whereby said silicon oxide forms at least a portion of said dielectric isolation for a region of single crystal silicon in said first or second body and (2) forming a device in said single crystal region of silicon.
Claim 2
Dependent Claim
116 words
A process for producing a dielectrically isolated silicon region comprising the steps of (1) contacting a first and second body so that a silicon oxide and OH moieties are present at the interface between said first and second body and fusing said first and second bodies, wherein said fusion is accomplished by producing an electrical potential drop across said interface of less than 100 volts and subjecting said interface to a temperature of at least 1050 degrees C. whereby said silicon oxide forms at least a portion of said dielectric isolation for a region of single crystal silicon in said first or second body and (2) forming a device in said single crystal region of silicon.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said potential difference is less than 50 volts.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said first and said second body comprise silicon.
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein said first and said second body have a surface including a region of a silicon oxide.
Claim 6
Dependent Claim
19 words
The process of claim 1 including the step of annealing said first and said second body after said fusion.
Claim 7
Dependent Claim
25 words
The process of claim 1 wherein said dielectric isolation is provided completely by a silicon oxide which comprises said silicon oxide present at said interface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-26 | 1988-08-27 | 1989-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-26 | 1992-08-27 | 1993-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-26 | 1996-08-27 | 1997-02-26 | $7700.00 | Window Closed / Lapsed |