Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage

Claim 2

In a method of manufacturing a semiconductor integrated circuit wherein a plurality of monocrystalline semiconductor regions are formed in a polychrstalline semiconductor support substrate and wherein insulating material is formed between said island regions and said substrate to isolate said regions from each other and from said support substrate, and wherein circuit elements are formed in said island regions in an oxygen atmosphere at such high temperatures which would ordinarily subject said support substrate to warping resulting from the oxidation and the introduction of oxygen into said substrate, the improvement comprising the step of a. preventing the warping of said support substrate resulting from the oxidation and the introduction of oxygen into said substrate during the formation of said circuit elements by a1. initially forming a passivation film on those surfaces of said support substrate which would otherwise be exposed to said oxygen atmosphere and said such high temperatures prior to the carrying out of steps in which said oxygen atmosphere and said such high temperatures are employed for the formation of said circuit elements, and a2. retaining said initially formed passivation film on said surfaces of said support substrate during the performance of those steps in which said oxygen atmosphere and said such high temperatures are employed for the formation of said circuit elements, to thereby prevent the unwanted warping of said support substrate due to the oxidation and introduction of oxygen into said support during the formation of said circuit elements.

Claim 3

The improvement according to claim 1, wherein said passivation film is made of a material selected from the group consisting of silicon nitride, tantalum pentoxide, alumina, and silicon oxide which grown by a vapor phase chemical reaction at a temperature below 800° C.

Claim 4

The improvement according to claim 1, wherein the coefficient of thermal expansion of said passivation film approximates that of said support substrate.

Claim 5

The improvement according to claim 1, wherein said monocrystalline island regions are formed in one principal surface of said polycrystalline semiconductor support substrate and said step (a1) comprises the step of forming said passivation film on the other principal surfaces of said support substrate.

Claim 6

In method of manufacturing a semiconductor integrated circuit which includes the steps of a. cutting grid-shaped grooves in one of the principal surfaces of a silicon single crystal wafer; b. forming a silicon oxide film on at least said one of the principal surfaces of said wafer; c. growing, through vapor phase, a polycrystalline silicon support region on the silicon oxide film which has been formed on said wafer; d. polishing the other principal surface of said wafer so that said grid-shaped grooves may be exposed, said grooves separating said wafer into plural single crystal silicon island regions isolated from one another; and e. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said polycyrstalline silicon support region to warping due to the oxidation and the introduction of oxygen into said support region, the improvement comprising the steps of i. forming, subsequent to step (d) but prior to step (e), a passivation film on those surfaces of said support region other than the surface thereof wherein said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and said such high temperatures during step (e); and ii. retaining said passivation film on said support region during step (e), to thereby prevent the unwanted warping of said support region due to the oxidation and introduction of oxygen into said support region during the formation of said circuit elements.

Claim 7

In method of manufacturing a semiconductor integrated circuit which includes the steps of a. cutting grid-shaped grooves in one of the principal surfaces of a silicon single crystal wafer; b. forming a silicon oxide film on at least said one of the principal surfaces of said wafer; c. growing, through vapor phase, a polycrystalline silicon support region on the silicon oxide film which has been formed on said wafer; d. polishing the other principal surface of said wafer so that said grid-shaped grooves may be exposed, said grooves separating said wafer into plural single crystal silicon island regions isolated from one another; and e. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said polycyrstalline silicon support region to warping due to the oxidation and the introduction of oxygen into said support region, the improvement comprising the steps of i. forming, subsequent to step (d) but prior to step (e), a passivation film on those surfaces of said support region other than the surface thereof wherein said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and said such high temperatures during step (e); and ii. retaining said passivation film on said support region during step (e), to thereby prevent the unwanted warping of said support region due to the oxidation and introduction of oxygen into said support region during the formation of said circuit elements.

Claim 8

In a method of manufacturing a semiconductor integrated circuit which includes the steps of: a. growing, through vapor phase, a first silicon polycrystalline region on a silicon oxide film provided on one principal surface of a silicon single crystal wafer; b. etching a predetermined portion of said wafer from the other principal surface thereof until said silicon oxide film is exposed, in order to form grid-shaped grooves by way of which said silicon oxide is exposed, said grid-shaped grooves separating said wafer into a plurality of monocrystalline island regions; c. forming silicon oxide on the exposed surfaces of said island regions; d. growing, through vapor phase, a second silicon polycrystalline support region on the silicon oxide-covered monocrystalline island regions; e. completely removing said first silicon polycrystalline support region; and f. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said second silicon polycrystalline support region to warping resulting from the oxidation and the introduction of oxygen into said second support region; the improvement comprising the steps of: i. forming, subsequent to step (e) but prior to step (f), a passivation film on those surfaces of said second support region other than the surface thereof wherein said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and said such high temperatures during step (f); and

Claim 9

In a method of manufacturing a semiconductor integrated circuit which includes the steps of: a. growing, through vapor phase, a first silicon polycrystalline region on a silicon oxide film provided on one principal surface of a silicon single crystal wafer; b. etching a predetermined portion of said wafer from the other principal surface thereof until said silicon oxide film is exposed, in order to form grid-shaped grooves by way of which said silicon oxide is exposed, said grid-shaped grooves separating said wafer into a plurality of monocrystalline island regions; c. forming silicon oxide on the exposed surfaces of said island regions; d. growing, through vapor phase, a second silicon polycrystalline support region on the silicon oxide-covered monocrystalline island regions; e. completely removing said first silicon polycrystalline support region; and f. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said second silicon polycrystalline support region to warping resulting from the oxidation and the introduction of oxygen into said second support region; the improvement comprising the steps of: i. forming, subsequent to step (e) but prior to step (f), a passivation film on those surfaces of said second support region other than the surface thereof wherein said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and said such high temperatures during step (f); and

Claim 10

ii. retaining said passivation film on said second support region during step (f), thereby prevent the unwanted warping of said second support region due to the oxidation and introduction of oxygen into said second support region during the formation of said circuit elements.

Claim 11

ii. retaining said passivation film on said second support region during step (f), thereby prevent the unwanted warping of said second support region due to the oxidation and introduction of oxygen into said second support region during the formation of said circuit elements.

Claim 12

In a method of manufacturing a semiconductor integrated circuit which includes the steps of; a. growing, through vapor phase, a first silicon polycrystalline support region on a silicon oxide film provided on one principal surface of a silicon single crystal wafer; b. etching a predetermined portion of said wafer from the other principal surface thereof until said silicon oxide film is exposed, in order to form grid-shaped grooves by way of which said silicon oxide is exposed, said grid-shaped grooves separating said wafer into a plurality of monocrystalline island regions; c. forming silicon oxide on the exposed surfaces of said island regions; d. growing, through vapor phase, a second silicon polycrystalline support region on the silicon oxide-covered monocrystalline island regions, e. polishing said second support region until said island regions are exposed; and f. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said first support region to warping due to the oxidation and the introduction of oxygen into said first support region; the improvement comprising: i. forming, subsequent to step (e) but prior to step (f), a passivation film on those surfaces of said first support region other than the surface thereof whereon said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and such high temperatues during step (f); and ii. retaining said passivation film on said first support region during step (f), to thereby prevent the unwanted warping of said first support region due to the oxidation and introduction of oxygen into said first support region during the formation of said circuit elements.

Claim 13

In a method of manufacturing a semiconductor integrated circuit which includes the steps of; a. growing, through vapor phase, a first silicon polycrystalline support region on a silicon oxide film provided on one principal surface of a silicon single crystal wafer; b. etching a predetermined portion of said wafer from the other principal surface thereof until said silicon oxide film is exposed, in order to form grid-shaped grooves by way of which said silicon oxide is exposed, said grid-shaped grooves separating said wafer into a plurality of monocrystalline island regions; c. forming silicon oxide on the exposed surfaces of said island regions; d. growing, through vapor phase, a second silicon polycrystalline support region on the silicon oxide-covered monocrystalline island regions, e. polishing said second support region until said island regions are exposed; and f. forming circuit elements in said island regions in an oxygen atmosphere and at such high temperatures which would ordinarily subject said first support region to warping due to the oxidation and the introduction of oxygen into said first support region; the improvement comprising: i. forming, subsequent to step (e) but prior to step (f), a passivation film on those surfaces of said first support region other than the surface thereof whereon said island regions are provided, which would otherwise be exposed to said oxygen atmosphere and such high temperatues during step (f); and ii. retaining said passivation film on said first support region during step (f), to thereby prevent the unwanted warping of said first support region due to the oxidation and introduction of oxygen into said first support region during the formation of said circuit elements.