US4004046A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating thin monocrystalline semiconductive layer on an insulating substrate
Assignee: Motorola Solutions Inc
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Filing: 1975-02-27
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Granted: 1977-01-18
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Expires: 1995-02-27
Abstract
Abstract An extremely thin monocrystalline semiconductive layer over an electrical insulator is disclosed, as well as its method of fabrication. The semiconductive layer is of high quality to provide an electrically uniform substrate for fabrication of semiconductive devices. The electrical insulator is also thin, providing a short path for thermal conduction from the semiconductive device. The method of fabricating the structure lends itself to inclusion of a buried layer, either by diffusion or by performing an epitaxial growth at a particular point in the process. The process also lends itself to an optional growth of an epitaxial layer on the semiconductive layer. The insulator may be made of an oxide of the semiconductive layer material, or it may be made of silicon nitride or silicon oxynitride.
Inventors
- 👤 James B. Price
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:00
CPC Classifications
H; H10; H10W; H10W15/00; H10P; H10P95/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/135; Y10S148/162; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
169 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices comprising the steps of: a. selecting a body of semiconductor material with substantially planar upper and under surfaces and having a predetermined thickness; b. removing selectively semiconductor material from the under surface of said body towards its upper surface a predetermined depth for forming a channel, said channel having a channel bottom surface portion substantially parallel to and a predetermined distance from said upper surface, the distance between said upper surface and said channel bottom surface portion defining the upper and lower semiconductor surfaces of the semiconductor substrate; c. depositing a dielectric material in said channel for selectively forming a dielectric layer for minimizing capacitance between said semiconductor material and said dielectric layer; d. depositing a layer of material over said dielectric layer for forming a base supporting member for said substrate; and e. forming directly into the upper surface above said channel of the semiconductor substrate at least one semiconductor junction device.
Claim 2
Independent Claim
169 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices comprising the steps of: a. selecting a body of semiconductor material with substantially planar upper and under surfaces and having a predetermined thickness; b. removing selectively semiconductor material from the under surface of said body towards its upper surface a predetermined depth for forming a channel, said channel having a channel bottom surface portion substantially parallel to and a predetermined distance from said upper surface, the distance between said upper surface and said channel bottom surface portion defining the upper and lower semiconductor surfaces of the semiconductor substrate; c. depositing a dielectric material in said channel for selectively forming a dielectric layer for minimizing capacitance between said semiconductor material and said dielectric layer; d. depositing a layer of material over said dielectric layer for forming a base supporting member for said substrate; and e. forming directly into the upper surface above said channel of the semiconductor substrate at least one semiconductor junction device.
Claim 3
Dependent Claim
70 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices as in claim 1 wherein: a. said step of removing selectively semiconductor material from the under surface of said body in order to precisely define the dimension between the upper and lower surfaces of the semiconductor substrate includes the step of measuring the distance between the upper surface and said channel bottom surface portion.
Claim 4
Dependent Claim
30 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices as in claim 1 wherein: a. said removing step comprises the step of etching.
Claim 5
Dependent Claim
45 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices as in claim 1 wherein: a. said forming step further includes the step of depositing a top layer of semiconductor material over said upper surface of the semiconductor substrate.
Claim 6
Dependent Claim
28 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices as in claim 4 wherein: a. said dielectric material comprises silicon dioxide.
Claim 7
Dependent Claim
63 words
A method of forming a semiconductor substrate located over a dielectric layer for receiving semiconductor devices in claim 1 wherein: a. said step of removing selectively semiconductor material from the under surface of said body in order to precisely define the dimension between the upper and lower semiconductor surfaces of the semiconductor substrate includes the step of measuring the depth of said channel.
Claim 8
Dependent Claim
35 words
The method of claim 6 wherein the step of measuring the thickness further comprises: exposing the top surface to light; and monitoring the intensity of the light passing through the top surface into the channel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-18 | 1980-07-19 | 1981-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-18 | 1984-07-19 | 1985-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-18 | 1988-07-19 | 1989-01-18 | $7700.00 | Window Closed / Lapsed |