US3913121A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor structure
Assignee: Signetics Corp
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Filing: 1970-01-27
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Granted: 1975-10-14
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Expires: 1990-01-27
Abstract
Abstract Semiconductor structure formed of a semiconductor body formed of semiconductor material with a first layer of insulating material on a surface of the semiconductor body. A first support structure is provided on the layer of insulating material. The semiconductor body has grooves therein which extend to the layer of insulating material to provide a plurality of islands of semiconductor material formed from the semiconductor body. A second layer of insulating material is formed on the exposed surfaces of the semiconductor islands. A second support structure is provided on the second layer of insulating material whereby the first support structure may be removed and circuit devices fabricated in the isolated islands.
Inventors
- 👤 Albert P Youmans
- 👤 David F Allison
- 👤 David A Maxwell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10D; H10D99/00; H10P; H10P95/00; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; H10W15/00; H10W15/01; H10W20/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
176 words
A SEMICONDUCTOR BODY COMPRISING: A FIRST LAYER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE HAVING AN UPPER AND A LOWER SURFACE: A SUBSTANTIALLY PLANAR SECOND LAYER ADJACENT AND ADHERENT TO THE UPPER SURFACE OF SAID FIRST LAYER, SAID SECOND LAYER COMPRISING A MATERIAL THAT PROTECTS SAID UPPER SURFACE FROM UNWANTED CONTAMINATION: A THIRD LAYER OF SUPPORTING MATERIAL ADJACENT AND ADHERENT TO THE EXPOSED PORTION OF SAID SECOND LAYER, SAID THIRD LAYER MATERIAL CAPABLE OF BEING EASILY REMOVED BY A SUBSTANCE THAT WILL NOT AFFECT SAID SECOND LAYER: A FOURTH LAYER ADJACENT AND ADHERENT TO THE LOWER SURFACE OF SAID FIRST LAYER AND FORMED TO SEPARATE SAID FIRST LAYER INTO A PLURALITY OF SEPARATE AND DISTINCT REGIONS SAID FOURTH LAYER COMPRISING A MATERIAL THAT PROVIDES ELECTRICAL INSULATION ALONG THE ADJACENT FIRST LAYER LOWER SURFACE: A FIFTH LAYER ADJACENT AN ADHERENT TO THE EXPOSED PORTION OF SAID FOURTH LAYER AND COMPRISING A SUPPORTING MATERIAL, WHEREBY INTEGRATED CIRCUITS MAY READILY BE FORMED BY REMOVING SAID THIRD LAYER OF SUPPORTING MATERIAL AND PROCESSING THE REMAINING PORTION OF THE WAFER.
Claim 2
Dependent Claim
176 words
A SEMICONDUCTOR BODY COMPRISING: A FIRST LAYER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE HAVING AN UPPER AND A LOWER SURFACE: A SUBSTANTIALLY PLANAR SECOND LAYER ADJACENT AND ADHERENT TO THE UPPER SURFACE OF SAID FIRST LAYER, SAID SECOND LAYER COMPRISING A MATERIAL THAT PROTECTS SAID UPPER SURFACE FROM UNWANTED CONTAMINATION: A THIRD LAYER OF SUPPORTING MATERIAL ADJACENT AND ADHERENT TO THE EXPOSED PORTION OF SAID SECOND LAYER, SAID THIRD LAYER MATERIAL CAPABLE OF BEING EASILY REMOVED BY A SUBSTANCE THAT WILL NOT AFFECT SAID SECOND LAYER: A FOURTH LAYER ADJACENT AND ADHERENT TO THE LOWER SURFACE OF SAID FIRST LAYER AND FORMED TO SEPARATE SAID FIRST LAYER INTO A PLURALITY OF SEPARATE AND DISTINCT REGIONS SAID FOURTH LAYER COMPRISING A MATERIAL THAT PROVIDES ELECTRICAL INSULATION ALONG THE ADJACENT FIRST LAYER LOWER SURFACE: A FIFTH LAYER ADJACENT AN ADHERENT TO THE EXPOSED PORTION OF SAID FOURTH LAYER AND COMPRISING A SUPPORTING MATERIAL, WHEREBY INTEGRATED CIRCUITS MAY READILY BE FORMED BY REMOVING SAID THIRD LAYER OF SUPPORTING MATERIAL AND PROCESSING THE REMAINING PORTION OF THE WAFER.
Claim 3
Dependent Claim
28 words
The body recited in claim 1 wherein said first layer of semiconductor material comprises silicon, and said second and fourth layer materials respectively comprise an oxide of silicon.
Claim 4
Dependent Claim
25 words
The body recited in claim 1 wherein said first layer semiconductor material is monocrystalline and said third and fifth layers comprise respectively a semiconductor material.
Claim 5
Dependent Claim
35 words
The body recited in claim 3 wherein said first layer of semiconductor material comprises monocrystalline silicon, said second and fourth layers comprise respectively silicon dioxide, and said third and fifth layers comprise respectively polycrystaline silicon.
Claim 6
Dependent Claim
19 words
The body recited in claim 4 wherein the oxide of silicon in said second layer is suitable for masking.
Claim 7
Dependent Claim
20 words
The body recited in claim 5 wherein said fourth layer extends substantially through said first layer to said second layer.
Claim 8
Dependent Claim
26 words
The body recited in claim 6 wherein said first layer comprises at least two regions, with one region having a higher impurity concentration than the other.
References Cited (Backward Citations)
US3290753A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-13 | 1979-04-14 | 1979-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-13 | 1983-04-14 | 1983-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-13 | 1987-04-14 | 1987-10-14 | $7700.00 | Window Closed / Lapsed |