US4838984A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching films of mercury-cadmium-telluride and zinc sulfid
Assignee: Texas Instruments Inc
•
Filing: 1987-07-16
•
Granted: 1989-06-13
•
Expires: 2007-07-16
Abstract
Abstract A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.
Inventors
- 👤 Joseph D. Luttmer
- 👤 Cecil J. Davis
- 👤 Patricia B. Smith
- 👤 Rudy L. York
- 👤 Lee M. Loewenstein
- 👤 Rhett B. Jucha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:33
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
67 words
A method for etching zinc sulfide film forming at least a part of a wafer comprising: (a) disposing said wafer into a process chamber at low pressure; (b) generating a remote plasma from a source of hydrogen; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a source of hydrocarbon.
Claim 2
Independent Claim
67 words
A method for etching zinc sulfide film forming at least a part of a wafer comprising: (a) disposing said wafer into a process chamber at low pressure; (b) generating a remote plasma from a source of hydrogen; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a source of hydrocarbon.
Claim 3
Dependent Claim
16 words
The process as set forth in claim 1 wherein said source of hydrocarbon is a methyl.
Claim 4
Dependent Claim
19 words
The process as set forth in claim 1 wherein said in situ plasma includes at least said remote plasma.
Claim 5
Dependent Claim
28 words
The process as set forth in claim 1 wherein the step of generating said remote plasma and the step of generating said in situ plasma are separately controlled.
Claim 6
Dependent Claim
23 words
The process as set forth in claim 1 including the steps of removing said wafer from said chamber and performing a ashing operation.
Claim 7
Dependent Claim
29 words
The process as set forth in claim 1 including the step of purging said chamber with an appropriate gas during the step of disposing said wafer in said chamber.
Claim 8
Independent Claim
79 words
A method for etching a film zinc sulfide forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from an alkyl gas; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber.
Claim 9
Independent Claim
79 words
A method for etching a film zinc sulfide forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from an alkyl gas; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber.
Claim 10
Independent Claim
104 words
A method for etching a film of mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) purging the vacuum process chamber with nitrogen; (c) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (d) generating a remote plasma from one of the group of an alkyl gas and a source of hydrogen; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma within said chamber from at least said remote plasma.
Claim 11
Independent Claim
104 words
A method for etching a film of mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) purging the vacuum process chamber with nitrogen; (c) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (d) generating a remote plasma from one of the group of an alkyl gas and a source of hydrogen; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma within said chamber from at least said remote plasma.
Claim 12
Dependent Claim
22 words
The process as set forth in claim 8 wherein the alkyl gas is taken from the group of methane, ethane, and methylbromide.
Claim 13
Dependent Claim
21 words
The process as set forth in claim 8 wherein the alkyl gas and said source of hydrogen are used in combination.
Claim 14
Independent Claim
69 words
A method for etching zinc sulfide film forming at least a part of a wafer comprising: (a) disposing said wafer into a process chamber at low pressure; (b) generating a remote plasma from helium and a source of flourine; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a source of hydrocarbon.
Claim 15
Independent Claim
69 words
A method for etching zinc sulfide film forming at least a part of a wafer comprising: (a) disposing said wafer into a process chamber at low pressure; (b) generating a remote plasma from helium and a source of flourine; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a source of hydrocarbon.
Claim 16
Dependent Claim
16 words
The process as set forth in claim 11 wherein said source of hydrocarbon is a methyl.
Claim 17
Dependent Claim
19 words
The process as set forth in claim 11 wherein said in situ plasma includes at least said remote plasma.
Claim 18
Dependent Claim
28 words
The process as set forth in claim 11 wherein the step of generating said remote plasma and the step of generating said in situ plasma are separately controlled.
Claim 19
Dependent Claim
29 words
The process as set forth in claim 11 including the step of purging said chamber with an appropriate gas during the step of disposing said wafer in said chamber.
Claim 20
Independent Claim
86 words
A method for etching a film zinc sulfide forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from helium and a source of flourine; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber with a hydrocarbon source.
Claim 21
Independent Claim
86 words
A method for etching a film zinc sulfide forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from helium and a source of flourine; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber with a hydrocarbon source.
Claim 22
Dependent Claim
16 words
The process as set forth in claim 16 wherein said source of hydrocarbon is a methane.
Claim 23
Dependent Claim
19 words
The process as set forth in claim 16 wherein said in situ plasma includes at least said remote plasma.
Claim 24
Dependent Claim
28 words
The process as set forth in claim 16 wherein the step of generating said remote plasma and the step of generating said in situ plasma are separately controlled.
Claim 25
Independent Claim
69 words
A method for etching a film of mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) generating a remote plasma from helium and a source of flourine; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a hydrocarbon source.
Claim 26
Independent Claim
69 words
A method for etching a film of mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) generating a remote plasma from helium and a source of flourine; (c) introducing said remote plasma into said chamber and to a face of said wafer; and (d) generating an in situ plasma within said chamber from a hydrocarbon source.
Claim 27
Dependent Claim
23 words
The process as set forth in claim 20 wherein the hydrocarbon source is selected from the group consisting of methane and an alkane.
Claim 28
Dependent Claim
38 words
The process as set forth in claim 20 wherein said source of flourine is selected from the group consisting of CF 4 , F 2 , SF 6 , NF 3 , or C 2 F 6 .
Claim 29
Dependent Claim
19 words
The process as set forth in claim 20 wherein said in situ plasma includes at least said remote plasma.
Claim 30
Dependent Claim
29 words
The process as set forth in claim 20 including the step of purging said chamber with an appropriate gas during the step of disposing said wafer in said chamber.
Claim 31
Independent Claim
85 words
A method for etching a film mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from helium and a source of flourine; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber with a hydrocarbon source.
Claim 32
Independent Claim
85 words
A method for etching a film mercury-cadmium-telluride forming at least a part of a wafer comprising: (a) transferring said wafer into a process chamber at low pressure; (b) purging said chamber with an appropriate gas; (c) maintaining said chamber at less than ambient pressure; (d) generating a remote plasma from helium and a source of flourine; (e) introducing said remote plasma into said chamber and to a face of said wafer; and (f) generating an in situ plasma with said chamber with a hydrocarbon source.
Claim 33
Dependent Claim
23 words
The process as set forth in claim 25 wherein the hydrocarbon source is selected from the group consisting of methane and an alkane.
Claim 34
Dependent Claim
38 words
The process as set forth in claim 25 wherein said source of flourine is selected from the group consisting of CF 4 , F 2 , SF 6 , NF 3 , or C 2 F 6 .
Claim 35
Dependent Claim
28 words
The process as set forth in claim 25 wherein the step of generating said remote plasma and the step of generating said in situ plasma are separately controlled.
Claim 36
Dependent Claim
19 words
The process as set forth in claim 25 wherein said in situ plasma includes at least said remote plasma.
Claim 37
Independent Claim
64 words
A method for etching a zinc sulfide film in a process chamber, comprising the steps of: (a) generating free radicals from a source of flourine in a plasma generator remote from the process chamber; (b) introducing said free radicals into said chamber into a face of said wafer; and (c) generating an in situ plasma within the process chamber from a source of hydrocarbon.
Claim 38
Independent Claim
64 words
A method for etching a zinc sulfide film in a process chamber, comprising the steps of: (a) generating free radicals from a source of flourine in a plasma generator remote from the process chamber; (b) introducing said free radicals into said chamber into a face of said wafer; and (c) generating an in situ plasma within the process chamber from a source of hydrocarbon.
Claim 39
Dependent Claim
22 words
The method as set forth in claim 30 wherein the hydrocarbon source is taken from the group consisting of methane and alkane.
Claim 40
Dependent Claim
38 words
The method as set forth in claim 30 wherein said source of flourine is taken from the group consisting of CF 4 , F 2 , SF 6 , NF 3 , and C 2 F 6 .
Claim 41
Dependent Claim
28 words
The process as set forth in claim 30 wherein the step of generating said free radicals and the step of generating said in situ plasma are controlled separately.
Claim 42
Dependent Claim
19 words
The plasma as set forth in claim 30 wherein said in situ plasma includes at least said free radicals.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |