US4837113A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing compound from group II-VI
Assignee: Texas Instruments Inc
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Filing: 1988-05-25
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Granted: 1989-06-06
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Expires: 2008-05-25
Abstract
Abstract A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.
Inventors
- 👤 Joseph D. Luttmer
- 👤 Rudy L. York
- 👤 Patricia B. Smith
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:41
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/306; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
88 words
A method for depositing a compound from groups II and VI on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from an inert gas; (c) illuminating said remote plasma within said chamber with additional ultraviolet light produced within said module; (d) introducing an organometallic compound gas into said chamber and to a face of said wafer; and (e) introducing a sulfide containing gas into said chamber and to a face of said wafer.
Claim 2
Independent Claim
88 words
A method for depositing a compound from groups II and VI on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from an inert gas; (c) illuminating said remote plasma within said chamber with additional ultraviolet light produced within said module; (d) introducing an organometallic compound gas into said chamber and to a face of said wafer; and (e) introducing a sulfide containing gas into said chamber and to a face of said wafer.
Claim 3
Dependent Claim
29 words
The process as set forth in claim 1 including the step of purging said chamber with an appropriate gas after the step of disposing said wafer in said chamber.
Claim 4
Dependent Claim
22 words
The process as set forth in claim 1 wherein the organometallic gas is from the group of dimethyltelluride, dimethylzinc, tetraethylead, and dimethylcadium.
Claim 5
Dependent Claim
14 words
The process as set forth in claim 1 wherein the sulfide is hydrogen sulfide.
Claim 6
Independent Claim
90 words
The method for depositing a compound from groups II and VI on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from an inert gas; and (c) illuminating said remote plasma within said chamber with additional Ultraviolet light produced within said module; (d) introducing an organometallic II-VI compound gas into said chamber and to a face of said wafer; and (e) introducing a selenide containing gas into said chamber and to a face of said wafer.
Claim 7
Independent Claim
90 words
The method for depositing a compound from groups II and VI on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from an inert gas; and (c) illuminating said remote plasma within said chamber with additional Ultraviolet light produced within said module; (d) introducing an organometallic II-VI compound gas into said chamber and to a face of said wafer; and (e) introducing a selenide containing gas into said chamber and to a face of said wafer.
Claim 8
Dependent Claim
26 words
The process as set forth in claim 5 including the step of purging said chamber with an appropriate gas after disposing said wafer in said chamber.
Claim 9
Dependent Claim
14 words
The process as set forth in claim 5 wherein said selenide is hydrogen selenide.
Claim 10
Dependent Claim
22 words
The process as set forth in claim 5 wherein the organometallic gas is from the group of dimethyltelluride, dimethylzinc, dimethylcadium, and tetraethylead.
Claim 11
Independent Claim
102 words
A method for depositing a compound from groups II and VI on a inside a process chamber which is within a process module wafer comprising: (a) generating free radicals in a chamber remote from the process chamber from an inert gas; (b) introducing the free radicals into the process chamber; (c) illuminating the free radicals within the process chamber with ultraviolet light produced within the process module; (d) introducing an organometallic compound gas into the process chamber and to a face of the wafer; and (e) introducing a sulfide containing gas into the process chamber and to a face of the wafer.
Claim 12
Independent Claim
102 words
A method for depositing a compound from groups II and VI on a inside a process chamber which is within a process module wafer comprising: (a) generating free radicals in a chamber remote from the process chamber from an inert gas; (b) introducing the free radicals into the process chamber; (c) illuminating the free radicals within the process chamber with ultraviolet light produced within the process module; (d) introducing an organometallic compound gas into the process chamber and to a face of the wafer; and (e) introducing a sulfide containing gas into the process chamber and to a face of the wafer.
Claim 13
Dependent Claim
19 words
The process as set forth in claim 9 including the step of purging said chamber with an appropriate gas.
Claim 14
Dependent Claim
22 words
The process as set forth in claim 9 wherein the organometallic gas is from the group of dimethyltelluride, dimethylzinc, tetraethylead, and dimethylcadium.
Claim 15
Dependent Claim
16 words
The process as set forth in claim 9 wherein the sulfide containing gas is hydrogen sulfide.
Claim 16
Independent Claim
93 words
A method for depositing a compound from groups II and VI on a wafer in a process chamber within a process module, comprising the steps of: (a) generating free radicals from an inert gas in a chamber remote from the process chamber; (b) illuminating said remote plasma within said chamber with ultraviolet light produced within the process module; (c) introducing an organometallic II-VI compound gas into the chamber and to a face of the wafer; and (d) introducing a selenide containing gas into the process chamber and to a face of the wafer.
Claim 17
Independent Claim
93 words
A method for depositing a compound from groups II and VI on a wafer in a process chamber within a process module, comprising the steps of: (a) generating free radicals from an inert gas in a chamber remote from the process chamber; (b) illuminating said remote plasma within said chamber with ultraviolet light produced within the process module; (c) introducing an organometallic II-VI compound gas into the chamber and to a face of the wafer; and (d) introducing a selenide containing gas into the process chamber and to a face of the wafer.
Claim 18
Dependent Claim
19 words
The process as set forth in claim 13 including the step of purging said chamber with an appropriate gas.
Claim 19
Dependent Claim
16 words
The process as set forth in claim 13 wherein said selenide containing gas is hydrogen selenide.
Claim 20
Dependent Claim
22 words
The process as set forth in claim 13 wherein the organometallic gas is from the group of dimethyltelluride, dimethylzinc, dimethylcadmium, and tetraethylead.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |