US4818326A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Processing apparatus
Assignee: Texas Instruments Inc
•
Filing: 1988-04-26
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Granted: 1989-04-04
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Expires: 2008-04-26
Abstract
Abstract A processing apparatus and method for providing a process module with a low pressure, low energy ion implanter and a remote microwave plasma generator and a source of thermal energy, which is adapted to receive wafers for processing in a low pressure carrier.
Inventors
- 👤 Jiann Liu
- 👤 Cecil J. Davis
- 👤 Lee M. Loewenstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:50
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
94 words
An apparatus for processing of wafers, comprising: (a) a vacuum process chamber; (b) a wafer support engaging a wafer in a face down position inside said vacuum chamber against a water cooled substrate; (c) at least one electrode capable of accelerating the excited molecules toward the face of the wafer; (d) said cooled substrate capable of being one of said at least one electrodes; (e) a remote plasma chamber capable of exciting gases to produce a remote plasma; and (f) a magnet at the periphery of said chamber capable of confining the ion beam.
Claim 2
Independent Claim
94 words
An apparatus for processing of wafers, comprising: (a) a vacuum process chamber; (b) a wafer support engaging a wafer in a face down position inside said vacuum chamber against a water cooled substrate; (c) at least one electrode capable of accelerating the excited molecules toward the face of the wafer; (d) said cooled substrate capable of being one of said at least one electrodes; (e) a remote plasma chamber capable of exciting gases to produce a remote plasma; and (f) a magnet at the periphery of said chamber capable of confining the ion beam.
Claim 3
Dependent Claim
16 words
The apparatus as set forth in claim 1 including a heater providing heat to said gases.
Claim 4
Dependent Claim
25 words
The apparatus as set forth in claim 1 including a heater heating said gas and connect to provide said gas to said remote plasma chamber.
Claim 5
Dependent Claim
21 words
The apparatus as set forth in claim 3 including a gas feed connect between said heater and said remote plasma chamber.
Claim 6
Dependent Claim
22 words
The apparatus as set forth in claim 1 wherein said wafer support includes at least three conductive fingers engaged with said wafer.
Claim 7
Independent Claim
90 words
An apparatus for processing of wafers, comprising: (a) a source of dopant gas; (b) a first chamber capable of producing charged particles, said first chamber being in fluid communication with said source of dopant gas; (c) a second chamber, having a wafer disposed therein, in fluid communication with said first chamber; (d) at least one electrode capable of accelerating charged particles toward a face of the wafer within said second chamber; (e) a magnet at the periphery of said second chamber capable of confining a beam of said charged particles.
Claim 8
Independent Claim
90 words
An apparatus for processing of wafers, comprising: (a) a source of dopant gas; (b) a first chamber capable of producing charged particles, said first chamber being in fluid communication with said source of dopant gas; (c) a second chamber, having a wafer disposed therein, in fluid communication with said first chamber; (d) at least one electrode capable of accelerating charged particles toward a face of the wafer within said second chamber; (e) a magnet at the periphery of said second chamber capable of confining a beam of said charged particles.
Claim 9
Dependent Claim
22 words
The apparatus as set forth in claim 6 wherein said source of dopant gas includes a source of dopant and a heater.
Claim 10
Dependent Claim
16 words
The apparatus as set forth in claim 6 wherein said first chamber is a microwave cavity.
Claim 11
Dependent Claim
16 words
The apparatus as set forth in claim 6 wherein said at least one electrode is cooled.
References Cited (Backward Citations)
US3439238A
Cited
US3765763A
Cited
US4306292A
Cited
US4250428A
Cited
US4293249A
Cited
US4465898A
Cited
US4393095A
Cited
US4447469A
Cited
US4439244A
Cited
US4439243A
Cited
US4615905A
Cited
US4493977A
Cited
US4629635A
Cited
US4579609A
Cited
US4609103A
Cited
US4584207A
Cited
JPS61114531A
Cited
JPS61133778A
Cited
JPS61150219A
Cited
US4632057A
Cited
US4673456A
Cited
US4684542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-03 | 1992-10-03 | 1993-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-03 | 1996-10-03 | 1997-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-03 | 2000-10-03 | 2001-04-04 | $7700.00 | Window Closed / Lapsed |