← Back to Patent Explorer
US4818326A Expired / Lapsed US ⏱️ 0.0 years remaining

Processing apparatus

Assignee: Texas Instruments Inc
•
Filing: 1988-04-26
•
Granted: 1989-04-04
•
Expires: 2008-04-26
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A processing apparatus and method for providing a process module with a low pressure, low energy ion implanter and a remote microwave plasma generator and a source of thermal energy, which is adapted to receive wafers for processing in a low pressure carrier.

Inventors

  • 👤 Jiann Liu
  • 👤 Cecil J. Davis
  • 👤 Lee M. Loewenstein

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 13:50
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 94 words
An apparatus for processing of wafers, comprising: (a) a vacuum process chamber; (b) a wafer support engaging a wafer in a face down position inside said vacuum chamber against a water cooled substrate; (c) at least one electrode capable of accelerating the excited molecules toward the face of the wafer; (d) said cooled substrate capable of being one of said at least one electrodes; (e) a remote plasma chamber capable of exciting gases to produce a remote plasma; and (f) a magnet at the periphery of said chamber capable of confining the ion beam.
Claim 2
Independent Claim 94 words
An apparatus for processing of wafers, comprising: (a) a vacuum process chamber; (b) a wafer support engaging a wafer in a face down position inside said vacuum chamber against a water cooled substrate; (c) at least one electrode capable of accelerating the excited molecules toward the face of the wafer; (d) said cooled substrate capable of being one of said at least one electrodes; (e) a remote plasma chamber capable of exciting gases to produce a remote plasma; and (f) a magnet at the periphery of said chamber capable of confining the ion beam.
Claim 3
Dependent Claim 16 words
The apparatus as set forth in claim 1 including a heater providing heat to said gases.
Claim 4
Dependent Claim 25 words
The apparatus as set forth in claim 1 including a heater heating said gas and connect to provide said gas to said remote plasma chamber.
Claim 5
Dependent Claim 21 words
The apparatus as set forth in claim 3 including a gas feed connect between said heater and said remote plasma chamber.
Claim 6
Dependent Claim 22 words
The apparatus as set forth in claim 1 wherein said wafer support includes at least three conductive fingers engaged with said wafer.
Claim 7
Independent Claim 90 words
An apparatus for processing of wafers, comprising: (a) a source of dopant gas; (b) a first chamber capable of producing charged particles, said first chamber being in fluid communication with said source of dopant gas; (c) a second chamber, having a wafer disposed therein, in fluid communication with said first chamber; (d) at least one electrode capable of accelerating charged particles toward a face of the wafer within said second chamber; (e) a magnet at the periphery of said second chamber capable of confining a beam of said charged particles.
Claim 8
Independent Claim 90 words
An apparatus for processing of wafers, comprising: (a) a source of dopant gas; (b) a first chamber capable of producing charged particles, said first chamber being in fluid communication with said source of dopant gas; (c) a second chamber, having a wafer disposed therein, in fluid communication with said first chamber; (d) at least one electrode capable of accelerating charged particles toward a face of the wafer within said second chamber; (e) a magnet at the periphery of said second chamber capable of confining a beam of said charged particles.
Claim 9
Dependent Claim 22 words
The apparatus as set forth in claim 6 wherein said source of dopant gas includes a source of dopant and a heater.
Claim 10
Dependent Claim 16 words
The apparatus as set forth in claim 6 wherein said first chamber is a microwave cavity.
Claim 11
Dependent Claim 16 words
The apparatus as set forth in claim 6 wherein said at least one electrode is cooled.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-04-03 1992-10-03 1993-04-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-04-03 1996-10-03 1997-04-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-04-03 2000-10-03 2001-04-04 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag