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US4808511A
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Vapor phase photoresist silylation process
Assignee: International Business Machines Corp
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Filing: 1987-05-19
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Granted: 1989-02-28
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Expires: 2007-05-19
Abstract
Abstract A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C. and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.
Inventors
- 👤 Steven J. Holmes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0755; G03F7/038; G03F7/26; G03F7/265; G03F7/40; G03F7/405; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
82 words
A vapor phase photoresist silylation process comprising the steps of: coating a substrate with a photoresist film that contains a masked reactive functionality; imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film; treating said exposed film with a silylating agent having the formula SiR 4 wherein one of said R groups is an acetate group; and developing the resulting image by RIE to obtain a negative tone relief image.
Claim 2
Dependent Claim
82 words
A vapor phase photoresist silylation process comprising the steps of: coating a substrate with a photoresist film that contains a masked reactive functionality; imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film; treating said exposed film with a silylating agent having the formula SiR 4 wherein one of said R groups is an acetate group; and developing the resulting image by RIE to obtain a negative tone relief image.
Claim 3
Dependent Claim
73 words
A vapor phase photoresist silylation process comprising the steps of: coating a substrate with a photoresist film that contains a masked reactive functionality; imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film; treating said exposed film with a silylating agent, wherein said silylating agent is trimethylsilylacetate; and developing the resulting image by RIE to obtain a negative tone relief image.
Claim 4
Dependent Claim
73 words
A vapor phase photoresist silylation process comprising the steps of: coating a substrate with a photoresist film that contains a masked reactive functionality; imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film; treating said exposed film with a silylating agent, wherein said silylating agent is trimethylsilylacetate; and developing the resulting image by RIE to obtain a negative tone relief image.
Claim 5
Dependent Claim
11 words
The process according to claim 2 wherein said photoresist is poly(t-butoxycarbonyloxystyrene).
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |