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US4797374A
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Method for selective heteroepitaxial III-V compound growth
Assignee: GEC-MARONI Ltd
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Filing: 1986-07-18
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Granted: 1989-01-10
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Expires: 2006-07-18
Abstract
Abstract PCT No. PCT/GB86/00423 Sec. 371 Date May 20, 1987 Sec. 102(e) Date May 20, 1987 PCT Filed Jul. 18, 1986 PCT Pub. No. WO87/00694 PCT Pub. Date Jan. 29, 1987.A method of producing a heterostructure device comprises defining in a substrate 5 of group III-V semiconductor material a structure, such as a mesa 9, having first and second faces oriented substantially parallel to the (100) and (111)A crystallographic planes. The mesa 9 is exposed to group III-V chemical reagents thereby to deposit group III-V materials on the first and/or second faces in dependence upon the group V constituent in the chemical reagents.
Inventors
- 👤 Michael D. Scott
- 👤 Alan H. Moore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:01
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/30; H01S5/34; H01S5/343; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P14/24; H10P14/27; H10P14/271; H10P14/2924; H10P14/2925; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/648; H01S5/2201; H01S5/2275; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391; Y; Y10; Y10S; Y10S148/00; Y10S148/029; Y10S148/065; Y10S148/072; Y10S148/119
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
A method for producing a heterostructure semiconductor device, the method comprising defining a structure in a semiconductor substrate comprising Indium Phosphide, the structure comprising one or more first faces orientated parallel or near parallel to a first crystallographic plane andd one or more second faces parallel or near parallel to a second crystallographic plane, and exposing the structure to a group III vapour phase chemical reagent and a group V chemical reagent, thereby to deposit a first group III-V material on said first or said second faces using one group V constituent without the use of a mask and deposit a second group III-V material on both said first and said second faces using another group V constituent.
Claim 2
Independent Claim
118 words
A method for producing a heterostructure semiconductor device, the method comprising defining a structure in a semiconductor substrate comprising Indium Phosphide, the structure comprising one or more first faces orientated parallel or near parallel to a first crystallographic plane andd one or more second faces parallel or near parallel to a second crystallographic plane, and exposing the structure to a group III vapour phase chemical reagent and a group V chemical reagent, thereby to deposit a first group III-V material on said first or said second faces using one group V constituent without the use of a mask and deposit a second group III-V material on both said first and said second faces using another group V constituent.
Claim 3
Dependent Claim
29 words
A method according to claim 1 wherein the group V constituent comprises phosphorus thereby to deposit the group III-V material on first and second faces of the defined structure.
Claim 4
Dependent Claim
34 words
A method according to claim 1 wherein the group V constituent comprises arsenic thereby to deposit the group III-V material on a first face of the defined structure in preference to a second face.
Claim 5
Dependent Claim
64 words
A method according to claim 1 wherein the structure is exposed to a chemical reagent comprising arsenic as a group V constituent thereby to deposit arsenide group III-V material over a first face of the structure and a chemical reagent comprising phosphorous as a group V constituent thereby to deposit phosphide group III-V material over a first and a second face of the structure.
Claim 6
Dependent Claim
45 words
A method according to claim 1 wherein the first faces are orientated substantially parallel to the (100) crystallographic plane and the second faces are orientated substantially parallel to the (111) A plane thereby to define a mesa or a trough structure in the semiconductor substrate.
Claim 7
Dependent Claim
25 words
A method according to claim 5 wherein the first faces are orientated at an offset of up to 5° relative to the (100) crystallographic plane.
Claim 8
Dependent Claim
75 words
A method according to claim 3 wherein the structure comprises a mesa structure and wherein exposure of the mesa to the chemical reagent comprising arsenic is arranged to provide a layer of arsenic group III-V material over a first face of the mesa structure and substrate, the layer having a thickness such that the length of the surface of the layer is substantially less than the length of the first face of the mesa structure.
Claim 9
Dependent Claim
20 words
A method according to claim 1 wherein the substrate is defined using an edge aligned mask and an anisotropic etchant.
Claim 10
Dependent Claim
25 words
A method according to claim 8 wherein the mask comprises one or more oxide stripes aligned with edges extending in the (011) or (011) directions.
Claim 11
Dependent Claim
15 words
A method according to claim 8 wherein the anisotropic etchant comprises a bromine based etchant.
Claim 12
Dependent Claim
21 words
A method according to claim 9 wherein the oxide stripes have a width in the range of 3 to 6 microns.
Claim 13
Dependent Claim
22 words
A method according to claim 5 wherein the mesa/trough of the defined structure has a depth of between 2 and 3 microns.
Claim 14
Dependent Claim
31 words
A method according to claim 1 wherein the vapour phase chemical reagents comprise a mixture of metal-organic reagent species or a mixture of metal organic and hydride or halide reagent species.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-10 | 1992-07-11 | 1993-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-10 | 1996-07-11 | 1997-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-10 | 2000-07-11 | 2001-01-10 | $7700.00 | Window Closed / Lapsed |