US3586925A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide diodes and array of diodes
Assignee: RCA Corp
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Filing: 1968-09-11
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Granted: 1971-06-22
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Expires: 1988-09-11
Abstract
Abstract A diode or an array of diodes comprising a substrate of single crystal GaAs of one conductivity type and an epitaxial layer of GaAs of opposite type grown on the substrate through an aperture in a layer of passivating material where the aperture is octagonal in shape and having its sides oriented in the 100 and 110 crystallographic planes of the substrate material.
Inventors
- 👤 Jacques R Collard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:28
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; C; C07; C07D; C07D239/00; C07D239/02; C07D239/06; C07D239/08; C07D239/10; H10D1/01; H10D1/045; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P95/00; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/043; Y10S148/049; Y10S148/05; Y10S148/051; Y10S148/056; Y10S148/085; Y10S148/106; Y10S148/115; Y10S148/151; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
29 words
A diode according to claim 1 in which a layer of metal is disposed on the top of said projecting sidewalls of said epitaxial layer above said passivating layer.
Claim 2
Dependent Claim
25 words
A diode according to claim 1 in which said passivating layer comprises a lower portion of silicon nitride and an upper portion of silicon dioxide.
Claim 3
Dependent Claim
25 words
A diode according to claim 2 in which said passivating layer comprises a lower portion of silicon nitride and an upper portion of silicon dioxide.
Claim 4
Dependent Claim
150 words
A semiconductor device of the type comprising an array of mesa-type semiconducting diodes on a common substrate, said device comprising: a. a substrate layer of single crystal GaAs of one conductivity type having a surface oriented in the 100 crystallographic plane, b. a thin passivating layer of an insulating substance, having a predetermined thickness, on said surface, c. an array of apertures in said passivating layer extending to said surface, said apertures being octagonal in shape and having sides oriented in the 100 and 110 planes of said substrate, and d. an epitaxial layer of GaAs of opposite conductivity type on said substrate surface within each of said apertures having a thickness greater than that of said passivating layer, such that portions of the sidewalls of each of said epitaxial layers project above said passivating layer, e. PN junctions being present between said substrate and each of said epitaxial layers.
Claim 5
Dependent Claim
27 words
A device according to claim 5 in which each of said diodes has a layer of metal on its top surface and extending over said projecting sidewalls.
Claim 6
Dependent Claim
24 words
A device according to claim 5 in which at least some of said diodes are connected by metallic means disposed on said passivating layer.
Claim 7
Dependent Claim
12 words
A device according to claim 6 in which said metal is silver.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |