US4789537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Prealloyed catalyst for growing silicon carbide whiskers
Assignee: United States Department of Energy
•
Filing: 1987-06-25
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Granted: 1988-12-06
•
Expires: 2007-06-25
Abstract
Abstract A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the β form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.
Inventors
- 👤 Peter D. Shalek
- 👤 Joel D. Katz
- 👤 George F. Hurley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:17
CPC Classifications
B; B01; B01J; B01J27/00; B01J27/20; B01J27/22; B01J27/224; C; C30; C30B; C30B25/00; C30B25/005; C30B29/00; C30B29/10; C30B29/36
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
146 words
A method for manufacturing silicon carbide whiskers wherein manufacturing time is reduced comprising: a. providing a growth substrate having a coating comprised of metallic catalyst particles alloyed with silicon, where the particles contain from about 1 to about 45 weight % silicon; b. heating the coated growth substrate in a gaseous environment comprised of a reducing gas; c. adding to the gaseous environment a gas comprised of silicon and a gas comprised of carbon; d. maintaining for a time period the coated growth substrate and gaseous environment at a temperature above a minimum temperature at which silicon carbide whiskers will form, where said minimum temperature is from about 1200° to about 1600° C.; and e. removing the gas comprised of silicon and the gas comprised of carbon from the gaseous environment, cooling the coated growth substrate, and recovering silicon carbide whiskers from the coated growth substrate.
Claim 2
Independent Claim
146 words
A method for manufacturing silicon carbide whiskers wherein manufacturing time is reduced comprising: a. providing a growth substrate having a coating comprised of metallic catalyst particles alloyed with silicon, where the particles contain from about 1 to about 45 weight % silicon; b. heating the coated growth substrate in a gaseous environment comprised of a reducing gas; c. adding to the gaseous environment a gas comprised of silicon and a gas comprised of carbon; d. maintaining for a time period the coated growth substrate and gaseous environment at a temperature above a minimum temperature at which silicon carbide whiskers will form, where said minimum temperature is from about 1200° to about 1600° C.; and e. removing the gas comprised of silicon and the gas comprised of carbon from the gaseous environment, cooling the coated growth substrate, and recovering silicon carbide whiskers from the coated growth substrate.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the reducing gas is hydrogen.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein the gas comprised of silicon is a gas chosen from a group containing SiO, SiCl 4 , SiCH 3 Cl 3 , and silane.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the gas comprised of carbon is methane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-06 | 1992-06-06 | 1992-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-06 | 1996-06-06 | 1996-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-06 | 2000-06-06 | 2000-12-06 | $7700.00 | Window Closed / Lapsed |