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US3933984A Expired / Lapsed US ⏱️ 0.0 years remaining

Process of manufacturing whisker crystalline silicon carbide

Assignee: Kanegafuchi Spinning Co Ltd
•
Filing: 1971-03-18
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Granted: 1976-01-20
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Expires: 1991-03-18
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Abstract

Abstract Whisker crystalline silicon carbide is prepared by heating a silicon-containing material for example, elemental silicon, silicon oxides, silicon hydroxides, silicon salts and the like with a halogen and carbon-containing material, such as a mixture of hydrocarbon and chlorine-containing material selected from chlorine, hydrogen chloride, tetrachloromethane and phosgene and halogenated hydrocarbon at a temperature of 800°C or higher under a substantial oxygen and nitrogen gas-free condition.

Inventors

  • 👤 Isao Kimura
  • 👤 Hidetsugu Habata

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 02:18
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/005; C30B29/00; C30B29/10; C30B29/36

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 87 words
A process of manufacturing whisker crystalline silicon carbide which comprises heating a reaction system containing 1. a solid phase consisting essentially of fine solid particles of silicon dioxide-containing inorganic material, and 2. a gaseous mixture consisting essentially of chlorine-containing material and aliphatic hydrocarbon, said chlorine-containing material being selected from the group consisting of chlorine, hydrogen chloride, tetrachloromethane and phosgene, the reaction system being heated to a reaction temperature of 80° to 2200° C in the substantial absence of oxygen and nitrogen to produce crystalline silicon carbide whiskers.
Claim 2
Dependent Claim 87 words
A process of manufacturing whisker crystalline silicon carbide which comprises heating a reaction system containing 1. a solid phase consisting essentially of fine solid particles of silicon dioxide-containing inorganic material, and 2. a gaseous mixture consisting essentially of chlorine-containing material and aliphatic hydrocarbon, said chlorine-containing material being selected from the group consisting of chlorine, hydrogen chloride, tetrachloromethane and phosgene, the reaction system being heated to a reaction temperature of 80° to 2200° C in the substantial absence of oxygen and nitrogen to produce crystalline silicon carbide whiskers.
Claim 3
Dependent Claim 41 words
A process according to claim 1, in which said reaction system contains as sole reactants therein said solid particles of silicon dioxide-containing inorganic material and said mixture (2) in the gas phase, said reaction system being free of solid elemental carbon.
Claim 4
Dependent Claim 16 words
A process as claimed in claim 1, wherein said heating temperature is from 1000° to 2200°C.
Claim 5
Dependent Claim 16 words
A process as claimed in claim 1, wherein said heating temperature is from 1200° to 2000°C.
Claim 6
Dependent Claim 34 words
A process as claimed in claim 1, wherein said reaction system is preheated to a temperature not lower than 100°C and below the reaction temperature, and then is further heated to said reaction temperature.
Claim 7
Dependent Claim 16 words
A process as claimed in claim 5, wherein said preheating temperature is not lower than 400°C.
Claim 8
Dependent Claim 16 words
A process as claimed in claim 5, wherein said preheating temperature is not lower than 800°C.
Claim 9
Dependent Claim 43 words
A process as claimed in claim 1, wnerein said mixture (2) is preheated to a temperature not lower than 100°C and below the reaction temperature and then is mixed with said silicon dioxide-containing inorganic material and then is heated to said reaction temperature.
Claim 10
Dependent Claim 56 words
A process as claimed in claim 1, in which the silicon dioxide containing inorganic material is placed in a receptacle in the reaction system and is heated to said reaction temperature, and a gaseous phase of said mixture (2) is blown thereacross for a period of time until the silicon is converted to silicon carbide whiskers.
Claim 11
Dependent Claim 45 words
A process as claimed in claim 1, wherein said silicon dioxide-containing inorganic material is selected from the group consisting of, silicon dioxide, portland cement, white portland cement, glass siliceous stone, siliceous sand, feldspar, kaolin and sintered materials from siliceous stone, siliceous sand, feldspar and kaolin.

References Cited (Backward Citations)

DE1184739B Cited
US3306705A Cited
US3371995A Cited
US3399980A Cited
FR1563415A Cited
FR1552005A Cited
US3622272A Cited
US3709981A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-01-19 1979-07-21 1980-01-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-01-19 1983-07-21 1984-01-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-01-19 1987-07-21 1988-01-20 $7700.00 Window Closed / Lapsed

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