US4349407A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
Assignee: United States Department of Energy
•
Filing: 1979-05-09
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Granted: 1982-09-14
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Expires: 1999-05-09
Abstract
Abstract A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330° C. to about 1500° C.
Inventors
- 👤 Lynn B. Lundberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:37
CPC Classifications
C; C30; C30B; C30B9/00; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S117/907
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
21 words
In a method of forming SiC single crystals by growth from solution, the improvement comprising using molten lithium as the solvent.
Claim 2
Dependent Claim
21 words
In a method of forming SiC single crystals by growth from solution, the improvement comprising using molten lithium as the solvent.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said solution is maintained at a temperature in the range of about 1330° to about 1500° C.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said temperature is about 1330° C.
Claim 5
Independent Claim
58 words
A method of forming beta SiC single crystals which comprises holding an excess of polycrystalline SiC in contact with molten lithium at a temperature at which said polycrystalline SiC dissolves in said molten lithium and maintaining the resultant solution at said temperature for a time sufficient for beta SiC single crystals of the desired size to precipitate therefrom.
Claim 6
Independent Claim
58 words
A method of forming beta SiC single crystals which comprises holding an excess of polycrystalline SiC in contact with molten lithium at a temperature at which said polycrystalline SiC dissolves in said molten lithium and maintaining the resultant solution at said temperature for a time sufficient for beta SiC single crystals of the desired size to precipitate therefrom.
References Cited (Backward Citations)
US2996456A
Cited
US3205101A
Cited
US3278274A
Cited
US3669763A
Cited
US3956032A
Cited
US4032371A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-13 | 1986-03-15 | 1986-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-13 | 1990-03-15 | 1990-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-13 | 1994-03-15 | 1994-09-14 | $7700.00 | Window Closed / Lapsed |