Patent US4349407A successfully refreshed from Google Patents.
US4349407A
Expired / Lapsed
US
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Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
Assignee: United States Department of Energy
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Filing: 1979-05-09
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Granted: 1982-09-14
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Expires: 1999-05-09
Abstract
Abstract A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330° C. to about 1500° C.
Inventors
- 👤 Lynn B. Lundberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:19
CPC Classifications
C; C30; C30B; C30B9/00; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S117/907
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
21 words
In a method of forming SiC single crystals by growth from solution, the improvement comprising using molten lithium as the solvent.
Claim 2
Dependent Claim
21 words
In a method of forming SiC single crystals by growth from solution, the improvement comprising using molten lithium as the solvent.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said solution is maintained at a temperature in the range of about 1330° to about 1500° C.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said temperature is about 1330° C.
Claim 5
Independent Claim
58 words
A method of forming beta SiC single crystals which comprises holding an excess of polycrystalline SiC in contact with molten lithium at a temperature at which said polycrystalline SiC dissolves in said molten lithium and maintaining the resultant solution at said temperature for a time sufficient for beta SiC single crystals of the desired size to precipitate therefrom.
Claim 6
Independent Claim
58 words
A method of forming beta SiC single crystals which comprises holding an excess of polycrystalline SiC in contact with molten lithium at a temperature at which said polycrystalline SiC dissolves in said molten lithium and maintaining the resultant solution at said temperature for a time sufficient for beta SiC single crystals of the desired size to precipitate therefrom.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-13 | 1986-03-15 | 1986-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-13 | 1990-03-15 | 1990-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-13 | 1994-03-15 | 1994-09-14 | $7700.00 | Window Closed / Lapsed |