US2996456A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing silicon carbide crystals
Assignee: Transitron Electronic Corp
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Filing: 1958-09-08
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Granted: 1961-08-15
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Expires: 1978-09-08
Abstract
No abstract record available.
Inventors
- 👤 Karl M Hergenrother
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:08
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/02; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S148/00; Y10S148/107; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
100 words
A METHOD OF GROWING SILICON CARBIDE CRYSTALS OF PRECISELY CONTROLLED COMPOSITION COMPRISING ARRANGING A SANDWICH OF THREE LAYERS OF MATERIAL WITH THE OUTER LAYERS COMPRISING SILICON CARBIDE AND THE INTERMEDIATE LAYER A SILICON CARBIDE SOLVENT SELECTED FROM A GROUP CONSISTING OF SILICON AND CHROMIUM, ESTABLISHING A TEMPERATURE GRADIENT ACROSS THE SANDWICH WITH THE TEMPERATURE OF THE INTERMEDIATE LAYER BETWEEN SUBSTANTIALLY 1700*C. AND 2000*C. SUFFICIENT TO MELT THE INTERMEDIATE LAYER WHEREBY SAID INTERMEDIATE LAYER FORMS A MIGRATING LIQUID ZONE WHICH DISSOLVES THE SILICON CARBIDE ON THE HOTTER SIDE AND REFORMS IT AS A SINGLE CRYSTAL SILICON CARBIDE ON THE OTHER SIDE.
References Cited (Backward Citations)
US2747971A
Cited
US2736847A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-08-14 | 1965-02-13 | 1965-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-08-14 | 1969-02-13 | 1969-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-08-14 | 1973-02-13 | 1973-08-15 | $7700.00 | Window Closed / Lapsed |