US2747971A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of pure crystalline silicon
Assignee: Westinghouse Electric Corp
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Filing: 1953-07-20
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Granted: 1956-05-29
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Expires: 1973-07-20
Abstract
No abstract record available.
Inventors
- 👤 Carl C Hein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:21
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/02; C01; C01B; C01B33/00; C01B33/02; C01B33/037; H; H10; H10P; H10P95/00; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1076; Y10T117/108
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
171 words
IN THE PROCESS OF RECRYSTALLIZING A MASS OF SILICON, THE STEPS COMPRISING PREPARING A LONGITUDINALLY DISPOSED MASS OF SILICON TO BE RECRYSTALLIZED, APPLYING IN CONTACT WITH ONE END OF THE LONGITUDINALLY DISPOSED MASS A BODY OF GOLD-SILICON ALLOY HAVING NOT IN SUBSTANTIAL EXCESS OF ABOUT 69 ATOM PERCENT OF GOLD, HEATING A NARROW ZONE COMPRISING THE BODY OF THE ALLOY AND THE IMMEDIATE ADJACENT SILICON TO A TEMPERATURE ABOVE THE MELTING POINT OF THE GOLD-SILICON ALLOY BUT SUBSTANTIALLY BELOW THE MELTING POINT OF SILICON, THE MEANS PRODUCING SUCH HEATING CONCENTRATING THE MAXIMUM TEMPERATURES TO A RELATIVELY NARROW ZONE INCLUDING THE BODY OF GOLD-SILICON ALLOY AND ONLY A SMALL PART OF THE IMMEDIATELY ADJACENT MASS OF SILICON, THE TEMPERATURE AT THE FACE OF THE BODY FURTHEST REMOVED FROM THE MASS OF THE SILICON BEING MAINTAINED AT A TEMPERATURE SUBSTANTIALLY LESS THAN AT THE FACE IN CONTACT WITH THE MASS OF SILICON, SLOWLY ADVANCING THE HEATED ZONE INTO THE MASS OF THE SILICON WHEREUPON SILICON HEATED TO THE SAID MAXIMUM TEMPERATURES ALLOYS WITH
Claim 2
Dependent Claim
171 words
IN THE PROCESS OF RECRYSTALLIZING A MASS OF SILICON, THE STEPS COMPRISING PREPARING A LONGITUDINALLY DISPOSED MASS OF SILICON TO BE RECRYSTALLIZED, APPLYING IN CONTACT WITH ONE END OF THE LONGITUDINALLY DISPOSED MASS A BODY OF GOLD-SILICON ALLOY HAVING NOT IN SUBSTANTIAL EXCESS OF ABOUT 69 ATOM PERCENT OF GOLD, HEATING A NARROW ZONE COMPRISING THE BODY OF THE ALLOY AND THE IMMEDIATE ADJACENT SILICON TO A TEMPERATURE ABOVE THE MELTING POINT OF THE GOLD-SILICON ALLOY BUT SUBSTANTIALLY BELOW THE MELTING POINT OF SILICON, THE MEANS PRODUCING SUCH HEATING CONCENTRATING THE MAXIMUM TEMPERATURES TO A RELATIVELY NARROW ZONE INCLUDING THE BODY OF GOLD-SILICON ALLOY AND ONLY A SMALL PART OF THE IMMEDIATELY ADJACENT MASS OF SILICON, THE TEMPERATURE AT THE FACE OF THE BODY FURTHEST REMOVED FROM THE MASS OF THE SILICON BEING MAINTAINED AT A TEMPERATURE SUBSTANTIALLY LESS THAN AT THE FACE IN CONTACT WITH THE MASS OF SILICON, SLOWLY ADVANCING THE HEATED ZONE INTO THE MASS OF THE SILICON WHEREUPON SILICON HEATED TO THE SAID MAXIMUM TEMPERATURES ALLOYS WITH
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-05-29 | 1959-11-28 | 1960-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-05-29 | 1963-11-28 | 1964-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-05-29 | 1967-11-28 | 1968-05-29 | $7700.00 | Window Closed / Lapsed |