US2631356A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making p-n junctions
Assignee: —
•
Filing: —
•
Granted: 1953-03-17
•
Expires: 1970-03-17
Abstract
No abstract record available.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:05
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B15/04; C30B29/00; C30B29/02; C30B29/06
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
60 words
THE METHOD OF MAKING P-N JUNCTIONS IN SEMICONDUCTOR MATERIAL WHICH COMPRISES MELTING A MASS OF MATERIAL OF ONE ELECTRICAL CONDUCTIVITY TYPE, MAINTAINING THE MELT AT A TEMPERATURE ABOVE THE MELTING POINT, PARTLY IMMERSING IN THE MELT A SEED CRYSTAL OF THE MATERIAL OF THE OPPOSITE ELECTRICAL CONDUCTIVITY TYPE AND LIFTING THE CRYSTAL FROM THE MELT AT A RATE SUBSTANTIALLY THE
Claim 2
Independent Claim
60 words
THE METHOD OF MAKING P-N JUNCTIONS IN SEMICONDUCTOR MATERIAL WHICH COMPRISES MELTING A MASS OF MATERIAL OF ONE ELECTRICAL CONDUCTIVITY TYPE, MAINTAINING THE MELT AT A TEMPERATURE ABOVE THE MELTING POINT, PARTLY IMMERSING IN THE MELT A SEED CRYSTAL OF THE MATERIAL OF THE OPPOSITE ELECTRICAL CONDUCTIVITY TYPE AND LIFTING THE CRYSTAL FROM THE MELT AT A RATE SUBSTANTIALLY THE
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Cited
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1956-03-16 | 1956-09-15 | 1957-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1960-03-16 | 1960-09-15 | 1961-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1964-03-16 | 1964-09-15 | 1965-03-17 | $7700.00 | Window Closed / Lapsed |