Method for producing an electronic device having a multi-layer structure

Claim 1

A method for producing in a film forming space an electronic device with a multi-layer structure having one or more valence electron controlled semiconductor thin layers formed on a substrate, which comprises: (i) depositing via plasma chemical vapor deposition at least one of said valence electron controlled semiconductor thin layers and (ii) forming at least one other semiconductor thin layer by (a) separately introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space through a gas introducing conduit system; (b) producing therefrom a mixture to effect chemical contact therebetween to thereby form a plural number of precursors containing at least one precursor in an excited state; (c) transferring said at least one precursor into the film forming space which is in communication with the reaction space so as to cause said at least one precursor to act as a feed source for the constituent element of and form said at least one other semiconductor thin layer; and (d) said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material, said coaxially aligned conduits extending into the film forming space such that the exit orifices of the inner conduits are set inwardly from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material exiting said inner conduit, said substrate positioned from several millimeters to 20 centimeters from the exit orifice of said outer conduit.

Claim 2

A method for producing in a film forming space an electronic device with a multi-layer structure having one or more valence electron controlled semiconductor thin layers formed on a substrate, which comprises: (i) depositing via plasma chemical vapor deposition at least one of said valence electron controlled semiconductor thin layers and (ii) forming at least one other semiconductor thin layer by (a) separately introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space through a gas introducing conduit system; (b) producing therefrom a mixture to effect chemical contact therebetween to thereby form a plural number of precursors containing at least one precursor in an excited state; (c) transferring said at least one precursor into the film forming space which is in communication with the reaction space so as to cause said at least one precursor to act as a feed source for the constituent element of and form said at least one other semiconductor thin layer; and (d) said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material, said coaxially aligned conduits extending into the film forming space such that the exit orifices of the inner conduits are set inwardly from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material exiting said inner conduit, said substrate positioned from several millimeters to 20 centimeters from the exit orifice of said outer conduit.